Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge1-xMnx magnetic semiconductor films

Deng, J. X.; Tian, Y. F.; He, S. M.; Bai, H. L.; Xu, T. S.; Yan, S. S.; Dai, Y. Y.; Chen, Y. X.; Liu, G. L.; Mei, L. M.
August 2009
Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062513
Academic Journal
Epitaxial single-crystal Ge1-xMnx ferromagnetic-semiconductor films were fabricated on Ge(001) substrates by molecular beam epitaxy. All the samples are ferromagnetic and have strong magnetic anisotropy indicated by different magnetization in plane and out of plane. The electrical transport of the films obeys Efros variable range hopping law in the low temperature range. Interestingly, a negative coefficient of the ordinary Hall effect of p-type carriers was found in the variable range hopping at low temperature. Anomalous Hall effect in Ge0.949Mn0.051 film was observed below the Curie temperature, indicating the carrier-mediated intrinsic ferromagnetism.


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