A 16 cm broad-beam ion source for ion-beam etching of quartz wafers

Yusheng Rao; Ming Li; Bo Qi; Fei Li
March 1996
Review of Scientific Instruments;Mar96, Vol. 67 Issue 3, p1009
Academic Journal
Reports on the development of a broad-beam ion source for ion-beam etching of quartz wafers used for resonators with a high basic frequency. Schematic diagram of the ion source; Optimization of the magnetic field configuration; Features of the extraction ion optics system; Roles of the extrusion moulding of grids.


Related Articles

  • Vertical Beam Angle Control: an Advancement/Requirement in Modern Ion Implant Manufacturing. Krueger, Christian; Rathmell, Robert; Kamenitsa, Dennis; Krimbacher, Bernhard // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p257 

    As the industry moves to the new technology nodes of 45 nm and 32 nm devices, implant angle control becomes even more crucial for consistent device performance. Commercial single wafer ion implanters are able to measure and correct the horizontal incident angle of the ion beam. But the vertical...

  • Sputtering yields of Ru, Mo, and Si under low energy Ar+ bombardment. Wu, Shiou-Min; van de Kruijs, Robbert; Zoethout, Erwin; Bijkerk, Fred // Journal of Applied Physics;Sep2009, Vol. 106 Issue 5, p054902 

    Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the...

  • Ion current density profile control of a scalable linear ion source and its application. Scholze, F.; Neumann, H.; Tartz, M.; Dienelt, J.; Schlemm, H. // Review of Scientific Instruments;Mar2006, Vol. 77 Issue 3, p03C107 

    We present a modular microwave excited electron cyclotron resonance type linear ion source concept that allows the adaptation of the ion beam dimensions to the requirements of the particular application. The ion beam current density profile is controlled by dividing the middle grid of a...

  • Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S/D Implants in an Existing Batch Implanter Production Line. Schmeide, Matthias; Kontratenko, Serguei; Müller, Ralf Peter; Krimbacher, Bernhard // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p332 

    This paper is focused on the integration and qualification of an Axcelis Optima HD single wafer high current spot beam implanter in an existing 200 mm production line with different types of Axcelis batch implanters for high current applications. Both the design of the beamline and the beam...

  • Optima HD Imax: Molecular Implant. Tieger, D. R.; Splinter, P. R.; Hsieh, T. J.; Reynolds, W. P. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p336 

    Molecular implantation offers semiconductor device manufacturers multiple advantages over traditional high current ion implanters. The dose multiplication due to implanting more than one atom per molecule and the transport of beams at higher energies relative to the effective particle energies...

  • Heat loading on the components of multimegawatt ion sources. Menon, M. M.; Tsai, C. C.; Whealton, J. H.; Schechter, D. E. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3356 

    Examines the underlying mechanisms involved in the heat loading on the accelerator grids and plasma chamber components of multimegawatt ion sources. Heat loading due to arc discharge; Mechanisms occurring in the accel column that contribute to heat loading on the source components; Variation in...

  • Uniform beam profiles of 5 cm convex gridded ion beam source. Koh, S.K.; Song, S.K.; Choi, W.K.; Jung, H.-J.; Gontcharov, L. // Review of Scientific Instruments;Nov95, Vol. 66 Issue 11, p5379 

    Characterizes a Kaufman-type five-centimeter convex gridded ion-beam source in terms of angle-resolved ion-beam current density and beam uniformity at various discharge currents, electromagnet currents, and acceleration potentials. Origin of the technology used in the gridded ion source;...

  • Ion divergence generated by nonuniform current density of intense ion beams. Slutz, S. A. // Physics of Fluids B: Plasma Physics;Aug92, Vol. 4 Issue 8, p2645 

    Large electric and magnetic fields are generated by the space charge and current of intense ion beams. These fields induce ion divergence if the beam current density is not uniform. Within the accelerating region the deflection of ions due to the electric fields is much larger than ion...

  • Mini rf-driven ion sources for focused ion beam systems. Jiang, X.; Ji, Q.; Chang, A.; Leung, K. N. // Review of Scientific Instruments;Apr2003, Vol. 74 Issue 4, p2288 

    Mini rf-driven ion sources with 1.2 cm and 1.5 cm inner chamber diameter have been developed at Lawrence Berkeley National Laboratory. Several gas species have been tested including argon, krypton, and hydrogen. These mini ion sources operate in inductively coupled mode and are capable of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics