Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Jones, E.; Phatak, P.; Grassman, A.
March 1996
Review of Scientific Instruments;Mar96, Vol. 67 Issue 3, p905
Academic Journal
Reports on the growth of gallium nitride films by molecular beam epitaxy using a hollow-anode nitrogen plasma source. Minimization of defect formation as a result of contamination and ion damage; Plasma properties of the hollow-anode plasma source; Plasma potential and electron density; Photoluminescence measurement.


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