Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Jones, E.; Phatak, P.; Grassman, A.
March 1996
Review of Scientific Instruments;Mar96, Vol. 67 Issue 3, p905
Academic Journal
Reports on the growth of gallium nitride films by molecular beam epitaxy using a hollow-anode nitrogen plasma source. Minimization of defect formation as a result of contamination and ion damage; Plasma properties of the hollow-anode plasma source; Plasma potential and electron density; Photoluminescence measurement.


Related Articles

  • Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam.... Gluschenkov, O.; Myoung, J.M. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p811 

    Investigates the stimulated emission of GaN (gallium nitride) epilayers grown by plasma-assisted molecular beam epitaxy (MBE) with an inductively coupled nitrogen plasma source. Approaches to the growth of epitaxial group III-nitride films; Relevance of MBE; Mechanism of the energy transfer in...

  • Growth and characterization of low-temperature grown GaN with high Fe doping. Akinaga, H.; Németh, S.; De Boeck, J.; Nistor, L.; Bender, H.; Borghs, G.; Ofuchi, H.; Oshima, M. // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380-520 °C. The samples were analyzed by x-ray diffraction and transmission electron...

  • A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111). Fernández-Garrido, S.; Grandal, J.; Calleja, E.; Sánchez-García, M. A.; López-Romero, D. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p126102-1 

    The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730–850 °C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram...

  • Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Ive, Tommy; Brandt, Oliver; Kostial, Helmar; Friedland, Klaus J.; Däweritz, Lutz; Ploog, Klaus H. // Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p024106 

    We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4×1017 cm-3, and a...

  • Study of GaN thin layers subjected to high-temperature rapid thermal annealing. Katsavets, N.I.; Laws, G. M.; Harrison, I.; Larkins, E. C.; Benson, T. M.; Cheng, T. S.; Foxon, C. T. // Semiconductors;Oct98, Vol. 32 Issue 10, p1048 

    A detailed study of the effect of rapid thermal annealing in a N[sub 2] or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed....

  • Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth... Kim, Esther; Berishev, I. // Journal of Applied Physics;1/15/1999, Vol. 85 Issue 2, p1178 

    Presents information on a study which demonstrated the high growth rate of gallium nitride thin films using gas source molecular beam epitaxy and time of flight mass spectroscopy of recoiled ions and reflection high energy electron diffraction. Experimental details; Results and discussion;...

  • P-type zinc-blende GaN on GaAs substrates. Lin, M.E.; Xue, G. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p932 

    Presents the properties of p-type cubic gallium nitride films. Fabrication of the magnesium-doped layers on vicinal (100) gallium arsenide substrates by plasma-enhanced molecular beam epitaxy; Hole mobilities of the material at room temperature; Use of x-ray diffractometry to confirm the cubic...

  • Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by.... Cheng Wang; Davis, Robert F. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p990 

    Presents a method for depositing highly resistive, undoped and p-type magnesium doped gallium nitride films by modified gas source molecular beam epitaxy. Carrier concentration and mobility measurement of the films; Indication on the role of magnesium-hydrogen complexes in achieving highly...

  • Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Wang, F.; Zhang, R.; Tan, W. S.; Xiu, X. Q.; Lu, D. Q.; Gu, S. L.; Shen, B.; Shi, Y.; Wu, X. S.; Zheng, Y. D.; Jiang, S. S.; Kuech, T. F. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4765 

    Crystal tilts in the epitaxial lateral overgrown (ELO) GaN region over SiO[sub 2] mask by hydride vapor phase epitaxial away from the opening region were investigated by scanning electron microscope and the four-circle x-ray diffraction method. The increased mask width and ratio of stripe...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics