TITLE

Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

AUTHOR(S)
Anders, A.; Newman, N.; Rubin, M.; Dickinson, M.; Jones, E.; Phatak, P.; Grassman, A.
PUB. DATE
March 1996
SOURCE
Review of Scientific Instruments;Mar96, Vol. 67 Issue 3, p905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports on the growth of gallium nitride films by molecular beam epitaxy using a hollow-anode nitrogen plasma source. Minimization of defect formation as a result of contamination and ion damage; Plasma properties of the hollow-anode plasma source; Plasma potential and electron density; Photoluminescence measurement.
ACCESSION #
4367154

 

Related Articles

  • Growth and characterization of low-temperature grown GaN with high Fe doping. Akinaga, H.; Németh, S.; De Boeck, J.; Nistor, L.; Bender, H.; Borghs, G.; Ofuchi, H.; Oshima, M. // Applied Physics Letters;12/25/2000, Vol. 77 Issue 26 

    We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380-520 °C. The samples were analyzed by x-ray diffraction and transmission electron...

  • A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111). Fernández-Garrido, S.; Grandal, J.; Calleja, E.; Sánchez-García, M. A.; López-Romero, D. // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p126102-1 

    The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (730–850 °C). Two different growth regimes were identified: compact and nanocolumnar. A growth diagram...

  • Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam.... Gluschenkov, O.; Myoung, J.M. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p811 

    Investigates the stimulated emission of GaN (gallium nitride) epilayers grown by plasma-assisted molecular beam epitaxy (MBE) with an inductively coupled nitrogen plasma source. Approaches to the growth of epitaxial group III-nitride films; Relevance of MBE; Mechanism of the energy transfer in...

  • Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Ive, Tommy; Brandt, Oliver; Kostial, Helmar; Friedland, Klaus J.; Däweritz, Lutz; Ploog, Klaus H. // Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p024106 

    We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4×1017 cm-3, and a...

  • Study of GaN thin layers subjected to high-temperature rapid thermal annealing. Katsavets, N.I.; Laws, G. M.; Harrison, I.; Larkins, E. C.; Benson, T. M.; Cheng, T. S.; Foxon, C. T. // Semiconductors;Oct98, Vol. 32 Issue 10, p1048 

    A detailed study of the effect of rapid thermal annealing in a N[sub 2] or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal quality of such films was observed....

  • Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers. Zhu, C.F.; Fong, W.K.; Leung, B.H.; Surya, C. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 4, p495 

    High-quality GaN thin films are grown by rf-plasma assisted molecular beam epitaxy. The quality of the GaN epitaxial layer is significantly improved by using an intermediate-temperature GaN buffer layer (ITBL) in addition to a conventional 20-nm-thick low-temperature buffer layer. The GaN...

  • P-type zinc-blende GaN on GaAs substrates. Lin, M.E.; Xue, G. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p932 

    Presents the properties of p-type cubic gallium nitride films. Fabrication of the magnesium-doped layers on vicinal (100) gallium arsenide substrates by plasma-enhanced molecular beam epitaxy; Hole mobilities of the material at room temperature; Use of x-ray diffractometry to confirm the cubic...

  • Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by.... Cheng Wang; Davis, Robert F. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p990 

    Presents a method for depositing highly resistive, undoped and p-type magnesium doped gallium nitride films by modified gas source molecular beam epitaxy. Carrier concentration and mobility measurement of the films; Indication on the role of magnesium-hydrogen complexes in achieving highly...

  • Influence of threading dislocations on the near-bandedge photoluminescence of wurtzite GaN thin films on SiC substrate. Qiu, X. G.; Segawa, Y.; Xue, Q. K.; Xue, Q. Z.; Sakurai, T. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    Wurtzite GaN thin films have been grown on the 6H-SiC substrates by plasma-assisted molecular-beam epitaxy. The correlation between crystalline structure and photoluminescence (PL) properties is examined by high-resolution x-ray diffraction and PL measured at different temperatures from 5 to 300...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics