Photovoltaic effect in the La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb heterojunctions with variant LaMnO3 layers

Wei, A. D.; Sun, J. R.; Lü, W. M.; Shen, B. G.
August 2009
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052502
Academic Journal
Influence of LaMnO3 layer, 0–12 nm in thickness, on photovoltaic effect (PVE) has been experimentally studied for the La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junction. Presence of LaMnO3 causes an obvious weakening of the PVE, demonstrated by the reduction in the carrier density excited by each photon. The interfacial barrier deduced from the PVE shows a rapid growth, from ∼1.22 to ∼1.45 eV, as the layer thickness increases from 0 to 2 nm, and saturates at ∼1.5 eV above 2 nm. On the contrary, current-voltage characteristics suggest a smooth reduction in interfacial barrier with layer thickness. These results can be quantitatively understood assuming the occurrence of a notch and a spike in the conduction band edges at the interface of the junction.


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