TITLE

A superconducting transistorlike device having good input-output isolation

AUTHOR(S)
Nevirkovets, I. P.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A multiterminal superconducting device with the S1IS2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S1IS2) bias current on the injector junction (S2FIS3) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.
ACCESSION #
43594072

 

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