Crucial role of doping dynamics on transport properties of Sb-doped SnO2 nanowires

Klamchuen, Annop; Yanagida, Takeshi; Nagashima, Kazuki; Seki, Shu; Oka, Keisuke; Taniguchi, Masateru; Kawai, Tomoji
August 2009
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p053105
Academic Journal
Impurity doping on semiconductor nanowires grown by vapor-liquid-solid (VLS) mechanism remains an important challenge. Here we demonstrate the importance of doping dynamics to control the transport properties of Sb-doped SnO2 nanowires. Sb doping decreased the resistivity of SnO2 nanowires down to 10-3 Ω cm range, while there was the lower bound of resistivity even increasing further the dopant concentration from supplied source. We found that the doping limitation is related to the re-evaporation events of dopant through vapor-solid growth process rather than VLS process. Thus understanding the dopant incorporation dynamics is essential to control the transport properties of SnO2 nanowires by impurity doping.


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