TITLE

Emission of terahertz radiation from SiC

AUTHOR(S)
Strait, Jared H.; George, Paul A.; Dawlaty, Jahan; Shivaraman, Shriram; Chandrashekhar, Mvs; Rana, Farhan; Spencer, Michael G.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p051912
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the emission of strong coherent broadband terahertz radiation from 6H-silicon-carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements χzzz(2)/χzxx(2) and the complex index of refraction of silicon carbide at terahertz frequencies.
ACCESSION #
43594038

 

Related Articles

  • Intrinsic carrier multiplication efficiency in bulk Si crystals evaluated by optical-pump/terahertz-probe spectroscopy. Yamashita, G.; Matsubara, E.; Nagai, M.; Kanemitsu, Y.; Ashida, M. // Applied Physics Letters;12/8/2014, Vol. 105 Issue 23, p1 

    We estimated the carrier multiplication efficiency in the most common solar-cell material, Si, by using optical-pump/terahertz-probe spectroscopy. Through close analysis of time-resolved data, we extracted the exact number of photoexcited carriers from the sheet carrier density 10 ps after...

  • Terahertz radiation induced by the Wannier-Stark localization of electrons in a natural silicon carbide superlattice. Sankin, V.; Andrianov, A.; Zakhar'in, A.; Petrov, A. // JETP Letters;Nov2011, Vol. 94 Issue 5, p362 

    Intense terahertz electroluminescence from SiC structures with a miniband electron spectrum caused by the natural superlattice has been observed. The shape of the terahertz radiation line, the linear dependence of the position of its maximum on the bias voltage, the typical value of the field...

  • Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide. Dzhibuti, Z. V.; Dolidze, N. D.; Narsiya, G. Sh.; Éristavi, G. L. // Technical Physics Letters;Oct97, Vol. 23 Issue 10, p746 

    It is shown that the temperatures of post-implantation annealing of radiation defects in silicon carbide may be reduced by pulsed photon treatment. With a correct choice of spectral composition and radiation energy, pulsed photon treatment is effective for annealing radiation defects through the...

  • The inflection point of the capacitance-voltage, C(VG), characteristic and the flat-band voltage of metal-oxide-semiconductor structures. Przewlocki, H. M.; Gutt, T.; Piskorski, K. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p204510-1 

    In a recently published paper, suggestions have been contained concerning close relations existing between the position of the inflection point on the capacitance-voltage, C(VG), characteristic of the metal-oxide-semiconductor (MOS) structure and the position of the flat-band voltage of this...

  • Integrated SiC Heater and , Silicon Nitride Tube for Molten-Aluminum Bath. Tada, Mitsuaki // Industrial Heating;Feb2013, Vol. 81 Issue 2, p53 

    The article describes the heating of molten aluminum by using a silicon carbide (SiC) heater combined with a silicon nitride protection tube as a single unit. Silicon nitride possesses superior characteristics of high heat resistance and high corrosion resistance, and so often used for the...

  • Defects in SiC for quantum computing. Weber, J. R.; Koehl, W. F.; Varley, J. B.; Janotti, A.; Buckley, B. B.; Van de Walle, C. G.; Awschalom, D. D. // Journal of Applied Physics;May2011, Vol. 109 Issue 10, p102417 

    The successful implementation of the nitrogen-vacancy (NV) center in diamond as a qubit has spawned a great deal of interest in this defect. In principle, similar defects suitable for quantum computing should exist in other material systems; however, very little work has been done on identifying...

  • Wireless sensors take the heat. Harris, Stephen // Engineer (00137758);9/20/2010, Vol. 295 Issue 7802, p10 

    No abstract available.

  • Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure. Yoshikawa, M.; Itoh, H.; Morita, Y.; Nashiyama, I.; Misawa, S.; Okumura, H.; Yoshida, S. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1309 

    Presents a study that investigated the radiation effects on cubic silicon carbide metal-oxide-semiconductor structures with high-frequency capacitance-voltage measurements. Details of the experiment; Results; Discussion.

  • Stress dependence of the cathodoluminescence spectrum of N-doped 3C-SiC. Porporati, Alessandro Alan; Hosokawa, Koichiro; Zhu, Wenliang; Pezzotti, Giuseppe // Journal of Applied Physics;11/1/2006, Vol. 100 Issue 9, p093508 

    The stress dependence of the room-temperature cathodoluminescence spectrum of N-doped cubic silicon carbide has been evaluated in a field-emission-gun scanning electron microscope, using the electron beam as an excitation source for luminescence emission. The electron-stimulated spectrum was...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics