Burn-in mechanism of 450 nm InGaN ridge laser test structures

Müller, Jens; Brüderl, Georg; Schillgalies, Marc; Tautz, Sönke; Dini, Dimitri; Breidenassel, Andreas; Galler, Bastian; Lutgen, Stephan
August 2009
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p051104
Academic Journal
We investigated the short term stability of the optical output power of 450 nm InGaN test lasers. The short term degradation strongly depended on ridge width. It was mainly caused by an increase in threshold current. From measurements of subthreshold wave-length blueshift, carrier lifetime, and output power, we found a decrease in carrier density after 15 h of aging. We show a direct correlation of the short term aging with current spreading effects.


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