Chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers

Bär, M.; Repins, I.; Contreras, M. A.; Weinhardt, L.; Noufi, R.; Heske, C.
August 2009
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052106
Academic Journal
The chemical and electronic surface structure of 20%-efficient Cu(In,Ga)Se2 thin film solar cell absorbers was investigated as a function of deposition process termination (i.e., ending the growth process in absence of either Ga or In). In addition to the expected In (Ga) enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the “In-terminated” absorber.


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