TITLE

Correlation of crystalline defects with photoluminescence of InGaN layers

AUTHOR(S)
Faleev, Nikolai; Jampana, Balakrishnam; Jani, Omkar; Yu, Hongbo; Opila, Robert; Ferguson, Ian; Honsberg, Christiana
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p051915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.
ACCESSION #
43594022

 

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