TITLE

Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC

AUTHOR(S)
Corrêa, S. A.; Marmitt, G. G.; Bom, N. M.; da Rosa, A. T.; Stedile, F. C.; Radtke, C.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Gobbi, A. L.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p051916
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experimental evidences of enhanced stability of Al2O3/SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to 1000 °C in different atmospheres, leading to crystallization and densification of Al2O3, with an increase in the band gap. Exposure to O2 at high temperatures produced SiO2 and AlSixOy at the Al2O3/SiC interface, with less silicate on the Si-terminated face. Annealing in N2 before exposure to O2 hindered oxygen diffusion and exchange, leading to more stable thin film structures from the point of view of atomic transport.
ACCESSION #
43594021

 

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