Low temperature preparation of ferroelectric bismuth titanate thin films

Kan-Hao Xue; Celinska, Jolanta; Paz de Araujo, Carlos A.
August 2009
Applied Physics Letters;8/3/2009, Vol. 95 Issue 5, p052908
Academic Journal
The low temperature metal organic decomposition techniques of ferroelectric bismuth titanate (BIT) thin films were investigated. BIT was found to be crystallized by rapid thermal processing at 450 °C. The stoichiometric Bi4Ti3O12 sample exhibited (117) orientation, while the Bi4.8Ti3O13.2 sample, with 20% excess bismuth, possessed a/b axes orientation with (117) component. Pt/Bi4.8Ti3O13.2/Pt ferroelectric capacitors were fabricated with temperature confined below 450 °C. The saturated 2Pr value was 31.1 μC/cm2. Such method is valuable for ferroelectric memories at 65 nm technology node and beyond because low temperature processes are required for the stability of interconnect material nickel silicide.


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