TITLE

In situ fast ellipsometric analysis of repetitive surface phenomena

AUTHOR(S)
Costa, J.; Campmany, J.; Canillas, A.; Andujar, J.L.; Bertran, E.
PUB. DATE
August 1997
SOURCE
Review of Scientific Instruments;Aug1997, Vol. 68 Issue 8, p3135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents an ellipsometric technique and ellipsometric analysis of repetitive phenomena based on the experimental arrangement of conventional phase modulated ellipsometers conceived to study fast surface phenomena in repetitive processes. Study of surface changes during plasma enhanced chemical vapor deposition of amorphous silicon.
ACCESSION #
4358617

 

Related Articles

  • Nondestructive depth profiling by spectroscopic ellipsometry. Vedam, K.; McMarr, P. J.; Narayan, J. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p339 

    It is shown that spectroscopic ellipsometry (SE) studies followed by the regression analysis of the SE data can yield information nondestructively and in a nonperturbing manner on the depth profile of multilayer structure; such as (i) quantitative information on the thickness and the dielectric...

  • In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry. Müller, Roland // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1020 

    In situ ellipsometry at a wavelength of 1300 nm is used to control the etching depth in InGaAs(P)/InP heterostructures. A rotating analyzer ellipsometer, adapted to a parallel-plate reactor for reactive ion etching (RIE), monitors the decreasing layer thickness during the dry etching process....

  • Description of a single modular optical setup for ellipsometry, surface plasmons, waveguide... Harke, M.; Teppner, R.; Schulz, O.; Motschmann, H.; Orendi, H. // Review of Scientific Instruments;Aug1997, Vol. 68 Issue 8, p3130 

    Describes a versatile modular setup which incorporates ellipsometry, surface plasmon spectroscopy, waveguide modes, their corresponding imaging techniques and Brewster angle microscopy in a single instrument. Discussion of the important design criteria; Lateral resolution produced; Localization...

  • Surface roughness evolution on glow discharge a-Si:H. Collins, R. W.; Cavese, J. M. // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1662 

    Probes the evolution of surface roughness over a wide range of film thickness during the growth of glow discharge hydrogenated amorphous silicon (a-Si:H) using in situ ellipsometry. Differences in the resulting film properties; Factor to which the columnar morphology observed for...

  • HF- and NH4OH-treated (111)Si surfaces studied by spectroscopic ellipsometry. Utani, Katsuyuki; Suzuki, Takahiro; Adachi, Sadao // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3467 

    Examines the etching characteristics of native SiO[sub2] films and surface properties of HF-treated silicon by spectroscopic ellipsometry. Best fit parameters for HF- and NH[sub4]OH-treated silicon; Steps in etching SiO[sub2] films on silicon in HF and NH[sub4]OH solutions; Facts on the...

  • Use of ellipsometric measurements for high-sensitivity monitoring of surface temperature. Yakushev, M. V.; Shvets, V. A. // Technical Physics Letters;Jul99, Vol. 25 Issue 7, p577 

    An analysis is made of the possibility of developing a high-sensitivity ellipsometric method of monitoring the surface temperature of samples in ultrahigh vacuum. The method is based on the temperature dependence of the phase thickness of the layer being studied. Measurements made for ZnTe...

  • Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry. Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni; Kim, Tong-Ho; Choi, Soojeong; Brown, April S.; Pettinari, Giorgio; Capizzi, Mario; Polimeni, Antonio // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p081917 

    The interaction of hydrogen with InN epitaxial films has been investigated by exposing InN to a remote hydrogen plasma and monitoring changes in the InN optical properties in real time via spectroscopic ellipsometry. Atomic hydrogen reacts with InN causing nitrogen depletion with formation of...

  • Formation of optical barriers with excellent thermal stability in single-crystal sapphire by hydrogen ion implantation and thermal annealing. Spratt, William T.; Huang, Mengbing; Jia, Chuanlei; Wang, Lei; Kamineni, Vimal K.; Diebold, Alain C.; Xia, Hua // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p111909 

    We report a study on the use of hydrogen ion implantation to form optical barriers with excellent thermal stability in single-crystal sapphire. Sapphire crystals are implanted with H ions of energies 0.2-1 MeV to doses 1016-1017 cm-2, followed by thermal annealing between 600-1200 °C. Prism...

  • Preparation and Characterization of Fouling-resistant, Temperature-responsive Membranes for Treatment of Produced Water. Wandera, Daniel // Proceedings of the Annual International Conference & Exhibition ;2010, p324 

    The article reports on the study which determines the nanolayer growth kinetics and temperature responsiveness of produced water using ellipsometry with a model surface.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics