TITLE

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

AUTHOR(S)
Reddy, M.; Peterson, J. M.; Johnson, S. M.; Vang, T.; Franklin, J. A.; Patten, E. A.; Radford, W. A.; Bangs, J. W.; Lofgreen, D. D.
PUB. DATE
August 2009
SOURCE
Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1764
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate. This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction (DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm−2 and 5 cm−2, respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm−2 and 500 cm−2, respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system has provided significant benefits in terms of both wafer uniformity and quality.
ACCESSION #
43547333

 

Related Articles

  • Free carrier accumulation at cubic AlGaN/GaN heterojunctions. Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A.; Tschumak, E.; Zado, A.; As, D. J. // Applied Physics Letters;4/2/2012, Vol. 100 Issue 14, p142108 

    Cubic Al0.3Ga0.7N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The...

  • CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range. Yakushev, M.; Varavin, V.; Remesnik, V.; Marin, D. // Semiconductors;Jun2014, Vol. 48 Issue 6, p767 

    Heteroepitaxial structures n-CdHgTe for the near-infrared spectral range ( x ≈ 0.4) are grown by molecular beam epitaxy on Si(310) substrates 72.6 and 100 mm in diameter. High composition homogeneity over the structure area is attained; the variation in x for 100-mm wafers is 0.015-0.025....

  • 1.59 μm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates. Seravalli, L.; Frigeri, P.; Trevisi, G.; Franchi, S. // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p213104 

    We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced...

  • Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region. Wang, Ding; Donetsky, Dmitry; Kipshidze, Gela; Lin, Youxi; Shterengas, Leon; Belenky, Gregory; Sarney, Wendy; Svensson, Stefan // Applied Physics Letters;7/29/2013, Vol. 103 Issue 5, p051120 

    InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum...

  • Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy. Heo, Junseok; Zhou, Zifan; Guo, Wei; Ooi, Boon S.; Bhattacharya, Pallab // Applied Physics Letters;10/28/2013, Vol. 103 Issue 18, p181102 

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR...

  • An indium-free substrate holder for radiative heating of quarter-wafer molecular-beam epitaxy samples. Kuhn, K. J. // Review of Scientific Instruments;Jan1990, Vol. 61 Issue 1, p184 

    The design and test of a new type of fractional-sample indium-free substrate holder is discussed. This holder has been used for the growth of indium-free material from quarter-wafer slices of 50mm GaAs material. The power required to bring the quarter-wafer indium-free holder to the desorption...

  • Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range. Egorov, A.; Karachinsky, L.; Novikov, I.; Babichev, A.; Nevedomskiy, V.; Bugrov, V. // Semiconductors;Nov2015, Vol. 49 Issue 11, p1522 

    Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs-InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of...

  • Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors. Steele, A. G.; Liu, H. C.; Buchanan, M.; Wasilewski, Z. R. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p1062 

    Presents a study that examined a series of intersubband multiple quantum well detector samples. Use of molecular beam epitaxy (MBE); Diagram of wafers grown sequentially by MBE.

  • Selective area metalorganic molecular-beam epitaxy of GaN and the growth of... Guha, S.; Bojarczuk, N.A. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p463 

    Demonstrates the selective area growth of gallium nitride on silicon wafers by metalorganic molecular beam epitaxy. High resolution cathodoluminescence results; Nonradiative recombination of free surfaces.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics