Midinfrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells

Nobile, M.; Detz, H.; Mujagic, E.; Andrews, A. M.; Klang, P.; Schrenk, W.; Strasser, G.
July 2009
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041102
Academic Journal
We report on the observation of midinfrared intersubband (ISB) absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy. ISB absorption in a broad wavelength region (5.8–11.6 μm) is observed in quantum wells with well widths ranging between 4.5 and 12 nm. The conduction band offset at the InGaAs/GaAsSb heterointerface is measured to be 360 meV, giving an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation.


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