Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

Gupta, J. A.; Barrios, P. J.; Lapointe, J.; Aers, G. C.; Storey, C.
July 2009
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041104
Academic Journal
Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20 °C continuous-wave operation, devices with a 400 μm long cavity provided 9 mW total output power at the 2396 nm target wavelength. High-resolution direct absorption measurements of HF gas agreed with HiTran calculations, yielding an absorption linewidth of 0.030 nm.


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