TITLE

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

AUTHOR(S)
Zhao, D. G.; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Wang, H.; Zhang, S. M.; Wang, Y. T.; Yang, Hui
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the IBL/IYL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.
ACCESSION #
43494252

 

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