TITLE

Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions

AUTHOR(S)
Li, R.; Yerci, S.; Dal Negro, L.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The 1.54 μm photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous silicon nitride and Er ions are investigated at different temperatures using two independent methods, which demonstrate phonon-mediated energy coupling. These results can lead to the engineering of more efficient Er-doped, Si-based light sources for on-chip nanophotonics applications.
ACCESSION #
43494218

 

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