Tunability of the piezoelectric fields in strained III-V semiconductors

Garg, R.; Hüe, A.; Haxha, V.; Migliorato, M. A.; Hammerschmidt, T.; Srivastava, G. P.
July 2009
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041912
Academic Journal
In this work we show that tetragonal strain can be used to create a sign reversal of the piezoelectric field in InAs/GaAs semiconductor heterostructures. The strain dependence of the internal displacement of the cation-anion pairs and of the bond polarity are taken into account, beyond the linear model, within an ab initio scheme. The reported tunability of the piezoelectric field is a concept that can be exploited in optoelectronic devices.


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