Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

Min Kyu Yang; Jae-Wan Park; Tae Kuk Ko; Jeon-Kook Lee
July 2009
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p042105
Academic Journal
This study examined the electrical properties of Ti/MnO2/Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions.


Related Articles

  • Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices. Woo, Jiyong; Jung, Seungjae; Siddik, Manzar; Cha, Euijun; Md. Sadaf, Sharif; Hwang, Hyunsang // Applied Physics Letters;10/17/2011, Vol. 99 Issue 16, p162109 

    We report the effect of the interfacial oxide layer on switching uniformity in Ge2Sb2Te5 (GST)-based resistive switching memory devices. An interfacial oxide layer acting as an internal resistor was fabricated by the simple thermal oxidation process at low temperature and confirmed by x-ray...

  • Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy. Liu, J. M.; Liu, X. L.; Xu, X. Q.; J. Wang; Li, C. M.; Wei, H. Y.; Yang, S. Y.; Zhu, Q. S.; Fan, Y. M.; Zhang, X. W.; Wang, Z. G. // Nanoscale Research Letters;Aug2010, Vol. 5 Issue 8, p1340 

    X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The...

  • Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy. Shi, K; Li, DB; Song, HP; Guo, Y; Wang, J; Xu, XQ; Liu, JM; Yang, AL; Wei, HY; Zhang, B; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG // Nanoscale Research Letters;Jan2011, Vol. 6 Issue 1, p1 

    Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band...

  • Angle Resolved X-Ray Photoelectron Spectroscopy (ARXPS) Analysis of Lanthanum Oxide for Micro-Flexography Printing. Hassan, S.; Yusof, M. S.; Embong, Z.; Maksud, M. I. // AIP Conference Proceedings;2016, Vol. 1704, p1 

    Micro-flexography printing was developed in patterning technique from micron to nano scale range to be used for graphic, electronic and bio-medical device on variable substrates. In this work, lanthanum oxide (La2O3) has been used as a rare earth metal candidate as depositing agent. This metal...

  • Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices. Lin, Y. S.; Zeng, F.; Tang, S. G.; Liu, H. Y.; Chen, C.; Gao, S.; Wang, Y. G.; Pan, F. // Journal of Applied Physics;Feb2013, Vol. 113 Issue 6, p064510 

    Resistive switching mechanism of Ti/HfOx/Pt memory devices was studied using X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy images. Spatial distributions of valence of Hf demonstrated that the fraction of Hf4+ increased from Ti/HfOx interface to HfOx/Pt...

  • A robust molecular platform for non-volatile memory devices with optical and magnetic responses. Simão, Cláudia; Mas-Torrent, Marta; Crivillers, Núria; Lloveras, Vega; Artés, Juan Manuel; Gorostiza, Pau; Veciana, Jaume; Rovira, Concepció // Nature Chemistry;May2011, Vol. 3 Issue 5, p359 

    Bistable molecules that behave as switches in solution have long been known. Systems that can be reversibly converted between two stable states that differ in their physical properties are particularly attractive in the development of memory devices when immobilized in substrates. Here, we...

  • Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection. Kundu, Souvik; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Priya, Shashank; Clavel, Michael; Hudait, Mantu K.; Biswas, Pranab; Banerji, Pallab; Halder, Nripendra N.; Sanghadasa, Mohan // Scientific Reports;7/24/2015, p12415 

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room...

  • Characterization and Properties of Nickel Aluminide Nanocrystals in an Alumina Layer for Nonvolatile Memory Applications. Kuo, Dong-Hau; Chen, Yung-Chuan; He, Jheng-Yu; Chu, Jinn // Journal of Electronic Materials;Jun2011, Vol. 40 Issue 6, p1345 

    Intermetallic nanocrystal memory devices with nickel aluminide nanocrystals in the electron-trapping layer and an alumina layer as the blocking layer were prepared on the surface of oxidized silicon substrates by sputter-coating of Ni and AlO in sequence, followed by an annealing procedure....

  • X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface. Zhang, Y.; Gajjala, G.; Hofmann, T.; Weinhardt, L.; Bär, M.; Heske, C.; Seelmann-Eggebert, M.; Meisen, P. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p093702 

    In order to study the chemical interaction during interface formation between Pd and SiC, Pd layers of various thicknesses were deposited on structurally disordered SiC surfaces at 800 °C. The Pd/SiC interface, which plays a crucial role for many applications such as high power electronic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics