TITLE

Degenerate rhombohedral and orthorhombic states in Ca-substituted Na0.5Bi0.5TiO3

AUTHOR(S)
Ranjan, Rajeev; Kothai, V.; Garg, Rohini; Agrawal, Anupriya; Senyshyn, Anatoliy; Boysen, Hans
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p042904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Neutron powder diffraction and temperature dependent dielectric studies were carried out on Ca-substituted Na0.5Bi0.5TiO3, i.e., (Na0.5Bi0.5)1-xCaxTiO3. Stabilization of an orthorhombic phase even at a low Ca concentration (0.05
ACCESSION #
43494194

 

Related Articles

  • Direct patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric. Fujisaki, Yoshihide; Ito, Hiroshi; Nakajima, Yoshiki; Nakata, Mitsuru; Tsuji, Hiroshi; Yamamoto, Toshihiro; Furue, Hirokazu; Kurita, Taiichiro; Shimidzu, Naoki // Applied Physics Letters;4/15/2013, Vol. 102 Issue 15, p153305 

    A simple direct patterning method for solution-processable organic semiconductors (OSCs) is demonstrated. The solution-wettable and nonwettable regions of a polymer gate dielectric layer were selectively controlled by a short tetrafluoromethane gas plasma treatment, and we precisely patterned...

  • Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation. Zhaohao Wang; Weisheng Zhao; Wang Kang; Yue Zhang; Klein, Jacques-Olivier; Ravelosona, Dafiné; Chappert, Claude // Applied Physics Letters;2/3/2014, Vol. 104 Issue 5, p053505-1 

    Ferroelectric tunnel memristor (FTM) was recently discovered. Its resistance can be continuously tuned by controlling the growth of domain in ferroelectric tunnel barrier. Experiments show its large OFF/ON resistance ratio (>10²) and high operation speed (∼10 ns), providing great...

  • Piezoresistive microcantilevers for in situ stress measurements during thin film deposition. Seel, Steven C.; Thompson, Carl V. // Review of Scientific Instruments;Jul2005, Vol. 76 Issue 7, p075103 

    Conventional thin film stress measurements detect the physical deflection of a cantilever substrate induced by the stress in a deposited film. We have developed an electrical technique for in situ stress measurement that detects the piezoresistive response of resistors fabricated within the...

  • Energy resolved spin dependent tunneling in 1.2 nm dielectrics. Ryan, J. T.; Lenahan, P. M.; Krishnan, A. T.; Krishnan, S. // Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103503 

    We demonstrate an electron paramagnetic resonance technique which simply links point defect structure and energy levels in a very direct way. The technique’s simplicity and the robust character of the response make it, at least potentially, of widespread utility in the understanding of...

  • Wall behavior of nanodomains as a function of their initial state. Odagawa, Nozomi; Cho, Yasuo // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p192906 

    A method for visualizing ferroelectric domain walls based on higher order nonlinear dielectric detection is proposed. This technique enables the authors to obtain information to visualize the domain wall clearly. Using this method, nanodomain variations with high temperature treatments are...

  • Role of interfacial charge in the piezoelectric properties of ferroelectric 0-3 composites. Wong, C. K.; Shin, F. G. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034111 

    We investigated the effects of compensating charges (at the inclusion-matrix interface) on the piezoelectric properties of ferroelectric 0-3 composites. Our previously developed model [C. K. Wong, Y. M. Poon, and F. G. Shin, J. Appl. Phys. 90, 4690 (2001)] has been extended to include the...

  • Effect of grain size on the electrical properties of (Ba,Ca)(Zr,Ti)O3 relaxor ferroelectric ceramics. Tang, Xin-Gui; Chan, Helen Lai-Wah // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034109 

    (Ba0.90Ca0.10)(Zr0.25Ti0.75)O3 (BCZT) relaxor ferroelectric ceramics with grain sizes of 0.85, 2.5, 15, and 30 μm were prepared from powders synthesized using a sol-gel process. The effects of grain size and dc field on the dielectric properties and tunabilities of BCZT ceramics were...

  • Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5,Ti0.5)O3 multilayer films derived by chemical solution deposition. Li, Y. W.; Sun, J. L.; Chen, J.; Meng, X. J.; Chu, J. H. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p182902 

    BiFeO3/Pb(Zr0.5,Ti0.5)O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC/cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles...

  • Micro-power generator supplying source for integrated circuit chip based on Pb(Sn,Zr,Ti)O3 ferroelectric ceramic. Zhang, Zhenhai; Cui, Zhanzhong; Yan, Jinglong; Li, Kejie // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p074103 

    We have demonstrated both experimentally and theoretically that a tin-modified and niobium-modified lead zirconate titanate (Pb(Sn,Zr,Ti)O3) ferroelectric generator system can function as a micro-power supplying source for integrated circuit (IC) chip of separate nonelectric impulse input shock...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics