TITLE

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

AUTHOR(S)
I-Hsuan Peng; Po-Tsun Liu; Tai-Bor Wu
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p041909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper reported the variation in performance of bias stressed low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) fabricated on metal foil substrate for flexible display applications. The mobility, threshold voltage (Vth), and trap density (Nt) of the proposed p-channel poly-Si TFT as a function of curvature radii were investigated. The significant increase in Vth by 9% was observed as the compressive or tensile mechanical strain increases to 0.1%. In addition, the hole mobility increases by 7% due to an increased compressive strain of 0.1%, while hole mobility decreases by 3.5% with the increase in tensile strain of 0.1%. After dc bias stressing, the LTPS TFT with mechanical strain had better performance than that on flat state in both the mobility drop and Vth shift. Mechanical strain influences the lattice arrangement and electric field at the drain electrode region that resisted device degradation in early stressing period.
ACCESSION #
43494187

 

Related Articles

  • Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors... Angelis, C.T.; Dimitriadis, C.A.; Samaras, I.; Brini, J.; Kamarinos, G.; Gueorguiev, V. K.; Ivanov, Tz. E. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p4095 

    Investigates the off-state current in n- and p-channel polycrystalline silicon thin-film transistors. Analysis of the leakage current noise spectral density; Determining the density of deep levels from noise analysis; Development of positive fixed charges at the interference near the drain...

  • Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement. Yan, Feng; Migliorato, Piero; Shimoda, Tatsuya // Applied Physics Letters;3/31/2003, Vol. 82 Issue 13, p2062 

    We report a method for characterizing trap generation-recombination processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. A theoretical model was developed, whereby n-channel thin film...

  • Avalanche-induced excess noise in polycrystalline silicon thin-film transistors. Dimitriadis, C. A.; Kamarinos, G. // Applied Physics Letters;1/4/1999, Vol. 74 Issue 1, p108 

    Studies avalanche-induced excess noise in polycrystalline silicon thin-film transistors. Generation-recombination processes ni the depletion region of the drain junction; Use of a model for excess noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

  • High Electron mobility polycrystalline silicon thin-film transistors on steel foil substrates. Ming Wu; Pangal, Kiran // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2244 

    Studies high electron mobility polycrystalline silicon thin film transistors on steel foil substrates. Formation of polycrystalline silicon films by crystallization of hydrogenated amorphous silicon; Transfer and output characteristics of the transistors; Effects of contamination from the steel...

  • Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors. Peng, Du.-Zen; Chang, Ting-Chang; Zan, Hsiao-Wen; Huang, Tiao-Yuan; Chang, Chun-Yen; Liu, Po-Tsun // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4780 

    In this letter, the characteristics and reliability of laser-activated polycrystalline silicon thin-film transistors (poly-Si TFTs) have been investigated by stressing the devices under V[sub ds] = 12 V and V[sub gs] = 15 V. In comparison with traditional furnace-activated poly-Si TFTs, the...

  • Electric-field-enhanced crystallization of amorphous silicon. Jang, Jin; Oh, Jae Young // Nature;10/1/1998, Vol. 395 Issue 6701, p481 

    Focuses on the importance of polycrystalline silicon for large-area electronic applications. How polycrystalline silicon is produced; How to reduce the solid-phase crystallization temperature of amorphous silicon; Fabrication process of the polycrystalline-silicon thin-film transistors.

  • Oxygen plasma and high pressure H[sub 2] O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors. Watakabe, H.; Sameshima, T. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 1, p141 

    Oxygen plasma and high pressure H[sub 2] O vapor heat treatment were applied to fabrication of n-channel polycrystalline silicon thin film transistors (poly-Si TFTs). 13.56 MHz-oxygen-plasma treatment at 250 °C, 100 W for 5 min effectively reduced defect states of 25-nm-thick silicon films...

  • Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors. Dimitriadis, C. A. // Journal of Applied Physics;9/15/2000, Vol. 88 Issue 6, p3624 

    Investigates the instability of n-channel hydrogenated polycrystalline silicon thin-film transistors with respect to gate biasing. Hydrogenation performed by hydrogen ion implantation through the gate oxide; Conduction mechanism in the gate oxide.

  • Influence of deposition pressure on the bulk and interface states in low pressure chemical.... Dimitriadis, C.A.; Tassis, D.H. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2709 

    Investigates the effect of deposition pressure on the bulk and interface states of undoped low pressure chemical vapor deposited polycrystalline silicon thin-film transistors. Composition of the bulk states; Exhibition of exponential distribution by the interface states; Distribution of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics