Tensile stress generation and dislocation reduction in Si-doped AlxGa1-xN films

Manning, I. C.; Weng, X.; Acord, J. D.; Fanton, M. A.; Snyder, D. W.; Redwing, J. M.
July 2009
Journal of Applied Physics;Jul2009, Vol. 106 Issue 2, p023506
Academic Journal
The effects of Si doping on the evolution of stress in AlxGa1-xN:Si thin films (x≈0.4–0.6) grown on 6H-SiC by metal organic chemical vapor deposition were investigated using in situ wafer curvature measurements. The results were correlated with changes in film microstructure as observed by transmission electron microscopy. The incorporation of Si into the films resulted in a compressive-to-tensile transition in the biaxial stress at the surface, and the magnitude of the tensile stress was found to increase in proportion to the Si concentration. The stress gradient was attributed to Si-induced dislocation inclination resulting from an effective climb mechanism. Si doping also resulted in a decrease in the threading dislocation density in the AlxGa1-xN layers, which was attributed to increased dislocation interaction and annihilation. The model describing tensile stress generated by dislocation effective climb was modified to account for the dislocation reduction and was found to yield an improved fit to the experimental stress-thickness data.


Related Articles

  • Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy. Chen, J. Y.; Chi, G. C.; Huang, P. J.; Chen, M. Y.; Hung, S. C.; Nien, C. H.; Chen, M. C.; Lan, S. M.; Pong, B. J.; Pan, C. J.; Tun, C. J.; Ren, F.; Chang, C. Y.; Pearton, S. J. // Applied Physics Letters;4/21/2008, Vol. 92 Issue 16, p162103 

    InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 °C, the corresponding InN QDs height increased from 16 to 108 nm while the...

  • Structure and Optical Properties of Epitaxial Indium Oxide Films Deposited on Y-Stabilized ZrO (111) by MOCVD. Zhao, Cansong; Li, Zhao; Mi, Wei; Luan, Caina; Feng, Xianjin; Ma, Jin // Journal of Electronic Materials;Aug2015, Vol. 44 Issue 8, p2719 

    Indium oxide (InO) films have been deposited on Y-stabilized ZrO (YSZ) (111) substrates, at temperatures from 500°C to 700°C, by metal-organic chemical vapor deposition. Structural analysis indicated that all the films were cubic bixbyite InO with an out-of-plane relationship of InO...

  • Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate. Chakraborty, Arpan; Moe, Craig G.; Wu, Yuan; Mates, Tom; Keller, Stacia; Speck, James S.; DenBaars, Steven P.; Mishra, Umesh K. // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p053717 

    We report on the electrical and structural characterization of Mg-doped Al-rich p-type Al0.69Ga0.31N alloys on SiC substrate grown by metal organic chemical vapor deposition. The impact of growth conditions and dopant activation annealing conditions on the electrical conductivity was...

  • Novel Cs-Free GaN Photocathodes. Tripathi, Neeraj; Bell, L.; Nikzad, SHOULEH; Tungare, Mihir; Suvarna, Puneet; Sandvik, Fatemeh // Journal of Electronic Materials;Apr2011, Vol. 40 Issue 4, p382 

    We report on a novel GaN photocathode structure that eliminates the use of Cs for photocathode activation. Development of such a photocathode structure promises reduced cost and complexity of the device, potentially with stable operation for a longer time. Device simulation studies suggest that...

  • Reduction of threading dislocations in crack-free AlGaN by using multiple thin Si[sub x]Al[sub 1-x]N interlayers. Akasaka, T.; Nishida, T.; Taniyasu, Y.; Kasu, M.; Makimoto, T.; Kobayashi, N. // Applied Physics Letters;11/17/2003, Vol. 83 Issue 20, p4140 

    Crack-free AlGaN thin films were directly grown on SiC substrates by metalorganic vapor phase epitaxy, and their threading dislocation density was reduced by one order of magnitude using 1–2 nm thick, heavily Si-doped AlN multiple interlayers. The interlayers form Si[sub x]Al[sub 1-x]N...

  • Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films. Zhao, D. G.; Hui Yang; Zhu, J. J.; Jiang, D. S.; Liu, Z. S.; Zhang, S. M.; Wang, Y. T.; Liang, J. W. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112106 

    The effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping...

  • Electrical characterization of low defect density nonpolar (11-;20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO). Imer, Bilge; Haskell, Benjamin; Rajan, Siddharth; Keller, Stacia; Mishra, Umesh K.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P. // Journal of Materials Research;Feb2008, Vol. 23 Issue 2, p10 

    We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane...

  • Growth and characterization of horizontal GaN wires on silicon. Xinbo Zou; Xing Lu; Lucas, Ryan; Kuech, Thomas F.; Choi, Jonathan W.; Gopalan, Padma; Kei May Lau // Applied Physics Letters;6/30/2014, Vol. 104 Issue 26, p1 

    We report the growth of in-plane GaN wires on silicon by metalorganic chemical vapor deposition. Triangular-shaped GaN microwires with semi-polar sidewalls are observed to grow on top of a GaN/Si template patterned with nano-porous SiO2. With a length-to-thickness ratio ~200, the GaN wires are...

  • Absence of 13C incorporation in 13CCl4-doped InP grown by metalorganic chemical vapor deposition. Cunningham, B. T.; Baker, J. E.; Stockman, S. A.; Stillman, G. E. // Applied Physics Letters;4/30/1990, Vol. 56 Issue 18, p1760 

    Intentional carbon doping of low-pressure metalorganic chemical vapor deposition (MOCVD) grown InP has been attempted with a 500 ppm mixture of 13CCl4 in high-purity H2, which has been used to obtain carbon-acceptor concentrations as high as 1×1019 cm-3 in GaAs. Under growth conditions...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics