Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

Thiesen, J.; Iwaniczko, E.
August 1999
Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p992
Academic Journal
Demonstrates epitaxial silicon growth of 8 angstroms per second at temperatures as low as 195 degrees Celsius, using hot-wire chemical vapor deposition. Discussion of various aspects of the process parameter space; Differences in the chemical kinetics of the process when compared to other epitaxial deposition techniques.


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