Low dark current, planar In[sub 0.4]Ga[sub 0.6]As p-i-n photodiode prepared by molecular beam

Tzeng, Y.C.; Li, S.S.; Lin, Y.W.; Ribas, P.; Park, R.M.
May 1991
Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2396
Academic Journal
Describes the fabrication of a planar, low dark current and high sensitivity In[sub 0.4]Ga[sub 0.6]As p-i-n photodiode fabricated on a semi-insulating gallium arsenide substrate with the aid of a multistage strain-relief buffer system. Quantum efficiency of the detector; Peak responsivity; Reverse leakage current for the mesa-etched photodiode.


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