Amorphization processes in self-ion-implanted Si: Dose dependence

Motooka, T.; Holland, O.W.
May 1991
Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2360
Academic Journal
Investigates the structural transformation in self-ion-implanted silicon using Raman spectroscopy and Rutherford backscattering spectrometry. Changes in the crystal silicon Raman peak; Attribution of peak shifts to uniaxial lattice expansion in the direction normal to the silicon surface; Characteristics of accumulated defects generated by ion bombardment.


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