TITLE

Amorphization processes in self-ion-implanted Si: Dose dependence

AUTHOR(S)
Motooka, T.; Holland, O.W.
PUB. DATE
May 1991
SOURCE
Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2360
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structural transformation in self-ion-implanted silicon using Raman spectroscopy and Rutherford backscattering spectrometry. Changes in the crystal silicon Raman peak; Attribution of peak shifts to uniaxial lattice expansion in the direction normal to the silicon surface; Characteristics of accumulated defects generated by ion bombardment.
ACCESSION #
4345538

 

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