TITLE

Amorphization processes in self-ion-implanted Si: Dose dependence

AUTHOR(S)
Motooka, T.; Holland, O.W.
PUB. DATE
May 1991
SOURCE
Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2360
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structural transformation in self-ion-implanted silicon using Raman spectroscopy and Rutherford backscattering spectrometry. Changes in the crystal silicon Raman peak; Attribution of peak shifts to uniaxial lattice expansion in the direction normal to the silicon surface; Characteristics of accumulated defects generated by ion bombardment.
ACCESSION #
4345538

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics