Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through

Euijoon Yoon; Reif, Rafael
February 1991
Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p862
Academic Journal
Demonstrates that in situ silicon (Si) cleaning technique prior to low-temperature gallium arsenide (GaAs) buffer layer growth affect the morphology of the GaAs buffer layer in the early stages of growth and the crystal quality of GaAs grown at 650 degrees centigrade. Thermal cleaning; Hydrogen/arsine plasma cleaning; Bimodal distribution of GaAs nuclei on Si.


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