TITLE

Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through

AUTHOR(S)
Euijoon Yoon; Reif, Rafael
PUB. DATE
February 1991
SOURCE
Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p862
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates that in situ silicon (Si) cleaning technique prior to low-temperature gallium arsenide (GaAs) buffer layer growth affect the morphology of the GaAs buffer layer in the early stages of growth and the crystal quality of GaAs grown at 650 degrees centigrade. Thermal cleaning; Hydrogen/arsine plasma cleaning; Bimodal distribution of GaAs nuclei on Si.
ACCESSION #
4345521

 

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