Transition from ferromagnetism to diamagnetism in undoped ZnO thin films

Kapilashrami, Mukes; Jun Xu; Ström, Valter; Rao, K. V.; Belova, Lyubov
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033104
Academic Journal
We report a systematic study of the film thickness dependence (0.1–1 μm) of room-temperature ferromagnetism in pure magnetron-sputtered ZnO thin films wherein a sequential transition from ferromagnetism to paramagnetism and diamagnetism as a function of film thickness is observed. The highest saturation magnetization (MS) value observed is 0.62 emu/g (0.018 μB/unit cell) for a ∼480 nm film. On doping the ZnO film with 1 at. % Mn enhances the MS value by 26%. The ferromagnetic order in ZnO matrix is believed to be defect induced. In addition, on doping with Mn hybridization between the 2p states of O and the 3d states of Mn occurs.


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