TITLE

Lattice polarity detection of InN by circular photogalvanic effect

AUTHOR(S)
Zhang, Q.; Wang, X. Q.; He, X. W.; Yin, C. M.; Xu, F. J.; Shen, B.; Chen, Y. H.; Wang, Z. G.; Ishitani, Y.; Yoshikawa, A.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.
ACCESSION #
43398093

 

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