Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033502
Academic Journal
Repeated vapor-liquid-solid (VLS) growth with Au and PH3–Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.


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