TITLE

Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering

AUTHOR(S)
Gourvest, E.; Lhostis, S.; Kreisel, J.; Armand, M.; Maitrejean, S.; Roule, A.; Vallée, C.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In situ annealing Raman scattering is used to evidence germanium postcrystallization in the crystalline phase of Ge-rich phase-change GeTe thin films. Both reflectivity and Raman scattering show that the crystallization temperature of the as-deposited amorphous phase increases with increasing Ge content going from Tc=180 °C (Ge0.5Te0.5) to 360 °C for Ge-rich Ge0.76Te0.24. The crystallized phase adopts the rhombohedral α-GeTe phase structure, and whatever the starting composition. For Ge-rich GeTe we observe a second characteristic temperature around 375 °C, which signs the crystallization of a precipitated cubic Ge phase and thus the presence of two distinct phases.
ACCESSION #
43398065

 

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