TITLE

Laser operation in nondoped thin films made of a small-molecule organic red-emitter

AUTHOR(S)
Rabbani-Haghighi, Hadi; Forget, Sébastien; Chénais, Sébastien; Siove, Alain; Castex, Marie-Claude; Ishow, Elena
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Stimulated emission in small-molecule organic films at a high dye concentration is generally hindered by fluorescence quenching, especially in the red region of the spectrum. Here we demonstrate the achievement of high net gains (up to 50 cm-1) around 640 nm in thermally evaporated nondoped films of 4-di(4′-tert-butylbiphenyl-4-yl)amino-4′-dicyanovinylbenzene, which makes this material suitable for green-light pumped single mode organic lasers with low threshold and superior stability. Lasing effect is demonstrated in a distributed Bragg resonator configuration, as well as under the form of random lasing at high pump intensities.
ACCESSION #
43398064

 

Related Articles

  • A study on the transmission of picosecond ultrasonic waves in Si/Mo superlattices. Kuo, Wei-I; Pan, En-Yea; Pu, Nen-Wen // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p093533 

    We have performed theoretical and experimental studies on the optical generation and transmission of picosecond ultrasonic pulses in a-Si/Mo superlattices using ultrafast lasers. The pulse shapes and spectra of collectively excited folded phonon waves were analyzed. Calculations show that the...

  • Characterization of second and third order optical nonlinearities of ZnO sputtered films. Larciprete, M. C.; Haertle, D.; Belardini, A.; Bertolotti, M.; Sarto, F.; Günter, P. // Applied Physics B: Lasers & Optics;Mar2006, Vol. 82 Issue 3, p431 

    We measured the second and third order optical nonlinearity of zinc oxide, grown on glass substrates by the ion beam sputtering technique. Second and third harmonic generation measurements were performed by means of the rotational Maker fringes technique for different polarization...

  • Parameter determination for device simulations of thin film silicon solar cells by inverse modeling based on temperature and spectrally dependent measurements. Ostertag, Julia P.; Klein, Stefan; Schmidt, Oliver; Brüggemann, Rudolf // Journal of Applied Physics;Mar2013, Vol. 113 Issue 12, p124506 

    Opto-electronic device simulation of thin-film silicon solar cells requires a set of many input parameters for the electronic properties of amorphous and microcrystalline silicon. In this paper, a systematic determination of these is performed by inverse modeling and particle swarm optimization...

  • Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: a wide band gap material for optoelectronic devices. Demichelis, F.; Crovini, G.; Giorgis, F.; Pirri, C. F.; Tresso, E. // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1730 

    Deals with a study which compared the optoelectronic properties of a-SiN[subx]:H[suby] films with those of device quality a-Si[sub1-x]C[subx]:H films. Experimental details; Results and discussion; Conclusions.

  • GaInAs/AlAsSb quantum-cascade lasers operating up to 400 K. Yang, Q.; Manz, C.; Bronner, W.; Mann, Ch.; Kirste, L.; Köhler, K.; Wagner, J. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131107 

    Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been demonstrated. The lasers are based on vertical-transition active regions and consist of 25 periods of Ga0.47In0.53As/AlAs0.56Sb0.44 active/injection regions grown lattice-matched on InP substrates...

  • Microstructural, magnetic, and optical properties of the self-assembled (III1-xMnx)V quantum structure. Jeon, H. C.; Lee, S. J.; Kang, T. W.; Kim, T. W. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p403 

    Diluted magnetic semiconductor (DMS) materials have attracted much attention because of the interest in both investigations of fundamental physical properties and promising applications for various spintronic devices. Among many DMS structures, (III1-xMnx)V ferromagnetic semiconductor quantum...

  • Effect of the active medium temperature on the operation of fast-flow CO2 lasers. Nevdakh, V. V.; Arshinov, K. I.; Gaiko, O. L. // Optics & Spectroscopy;Sep2009, Vol. 107 Issue 3, p371 

    A new formula is obtained for estimating the output power of fast-flow CO2 lasers. It is shown that a higher specific output power of these CO2 lasers in comparison with sealed-off CO2 lasers is caused mainly by the higher saturation intensity of the former. It is concluded that the temperature...

  • Diode pumped Nd:YAG laser repetitively Q-switched with Cr4+:YAG. Qinyong Zeng; Yong Wan; Dayong Zhu; Kai Han // Optics & Spectroscopy;Sep2009, Vol. 107 Issue 3, p498 

    Based on the rate equations of passively Q-switched solid state lasers, the performance of laser at a fixed pump power can be optimized through the proper choice of output coupler and the low-intensity transmission of saturable absorber. A simple expression for optimizing these two parameters is...

  • Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers. Obata, K.; Sugioka, K.; Midorikawa, K.; Inamura, T.; Takai, H. // Applied Physics A: Materials Science & Processing;Mar2006, Vol. 82 Issue 3, p479 

    The deep etching of GaN(0001) thin films epitaxially grown on Al2O3(0001) has been investigated by laser ablation using F2 and KrF excimer lasers. The simultaneous irradiation with F2 and KrF excimer lasers markedly improves etching quality compared with single-KrF excimer laser ablation and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics