Resistance of domain walls created by means of a magnetic force microscope in transversally magnetized epitaxial Fe wires

Hassel, C.; Stienen, S.; Römer, F. M.; Meckenstock, R.; Dumpich, G.; Lindner, J.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032504
Academic Journal
Magnetic domain walls are created in a controllable way in transversally magnetized epitaxial Fe wires on GaAs(110) by approaching a magnetic force microscope (MFM) tip. The electrical resistance-change due to the addition of these domain walls is measured. The anisotropic magnetoresistance as well as the intrinsic domain wall resistance contribute to the resistance-change. The efficiency of this procedure is proven by MFM images, which are obtained subsequent to the domain wall creation at a larger sample-to-probe distance. The contribution of the anisotropic magnetoresistance is calculated using micromagnetic calculations, thus making it possible to quantify the intrinsic domain wall resistance.


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