Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

de la Mare, M.; Zhuang, Q.; Krier, A.; Patanè, A.; Dhar, S.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031110
Academic Journal
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%–1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.


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