TITLE

Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range

AUTHOR(S)
de la Mare, M.; Zhuang, Q.; Krier, A.; Patanè, A.; Dhar, S.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range of 0%–1% and photoluminescence emission in the midinfrared spectral range. The photoluminescence emission of the sample containing 1% N reveals localized energy levels resonant with the conduction band states of InAsN.
ACCESSION #
43398047

 

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