Strain distribution and interface modulation of highly lattice-mismatched InN/GaN heterostructure nanowires

Kim, Y. H.; Park, H. J.; Kim, K.; Kim, C. S.; Yun, W. S.; Lee, J. W.; Kim, M. D.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033112
Academic Journal
The structural properties of InN/GaN heterostructure nanowires (NWs) were studied using transmission electron microscope techniques to determine strain behavior. A great quantity of the misfit strain between InN and GaN was relaxed through the introduction of misfit dislocations along the interface. Geometric phase analysis revealed a strain-concentration phenomenon in the strain map of the out-of-plane components and a gradual lattice recovery in that of the in-plane components over the InN/GaN interface. Interface structures that were modulated at the atomic-scale were observed in several InN/GaN heterostructure NWs. Complex strain distributions were identified in both InN and GaN.


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