Relationship between 4H-SiC/SiO2 transition layer thickness and mobility

Biggerstaff, T. L.; Reynolds Jr., C. L.; Zheleva, T.; Lelis, A.; Habersat, D.; Haney, S.; Ryu, S.-H.; Agarwal, A.; Duscher, G.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032108
Academic Journal
The interfacial region between silicon carbide (SiC) and its native oxide contains a high density of interfacial traps, which is considered a major problem leading to a lower mobility that has hindered SiC metal oxide semiconductor field effect transistors from reaching their theoretical expectations. We investigate the microstructure and chemistry of the 4H-SiC/SiO2 interface due to variations in nitric oxide annealing and aluminum implantation using Z-contrast imaging and electron energy loss spectroscopy. A transition layer with a carbon to silicon ratio greater than 1 is consistently observed on the SiC side of the interface in each of these samples, and the width of this transition layer is found to be inversely related to the effective channel mobility measured on fabricated devices.


Related Articles

  • Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon. Garcia-Gutierrez, D. I.; José-Yacamán, M.; Lu, Shifeng; Kelly, D. Q.; Banerjee, S. K. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p044323 

    We report experimental evidence for the segregation and preferential localization of C atoms at the surface and substrate interfaces in thin Ge1-xCx films deposited directly on Si (100). The results are interpreted in the context of C segregation providing a mechanism for strain relaxation. Four...

  • Advanced EELS Applications in Process Development. Stegmann, Heiko; Zschech, Ehrenfried // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p549 

    Electron energy-loss spectroscopy (EELS) in the transmission and scanning transmission electron microscope ((S)TEM) has become an indispensable tool for structural characterization and analysis of microelectronic products at the highest spatial resolution available. However, the introduction of...

  • Model-based quantification of EELS: is standardless quantification possible? Verbeeck, Jo; Bertoni, Giovanni // Microchimica Acta;Jun2008, Vol. 161 Issue 3/4, p439 

    Electron energy loss spectroscopy (EELS) is an ideal tool to obtain chemical information from nanoscale volumes. Quantification of the experimental spectra however has prevented for a long time access to the available information in a reliable and reproducible way. We present recent advances in...

  • Two bonding configurations of acetylene on Si(001)-(2×1): A combined high-resolution electron energy loss spectroscopy and density functional theory study. Mineva, T.; Nathaniel, R.; Kostov, K. L.; Widdra, W. // Journal of Chemical Physics;11/21/2006, Vol. 125 Issue 19, p194712 

    Two coexisting adsorption states of molecularly adsorbed acetylene on the Si(001)-(2×1) surface have been identified by a combined study based on the high-resolution electron energy loss spectroscopy and density functional computations. Seven possible adsorbate-substrate structures are...

  • Low energy electron energy-loss spectroscopy of CF3X (X=Cl,Br). Hoshino, M.; Sunohara, K.; Makochekanwa, C.; Pichl, L.; Cho, H.; Tanaka, H. // Journal of Chemical Physics;1/14/2007, Vol. 126 Issue 2, p024303 

    We report threshold electron energy-loss spectra for the fluorohalomethanes CF3X (X=Cl,Br). Measurements were made at incident electron energies of 30 and 100 eV in energy-loss range of 4–14 eV, and at scattering angles of 4° and 15°. Several new electronic transitions are observed...

  • Graded composition and valence states in self-forming barrier layers at Cu–Mn/SiO2 interface. Otsuka, Y.; Koike, J.; Sako, H.; Ishibashi, K.; Kawasaki, N.; Chung, S. M.; Tanaka, I. // Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p012101 

    A self-forming diffusion barrier (SFB) layer was formed at Cu–Mn/SiO2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron...

  • Investigation of the chemical composition profile of SiGe/Si(001) islands by analytical transmission electron microscopy. Schade, M.; Heyroth, F.; Syrowatka, F.; Leipner, H. S.; Boeck, T.; Hanke, M. // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p263101 

    The authors have determined the composition profile within individual Si1-xGex nanoscale islands on Si(001). Samples have been grown by means of liquid phase epitaxy in the Stranski-Krastanov mode. By applying electron energy loss spectroscopy, the intensities of Si K and Ge L edges have been...

  • Oxidation of diamond films by atomic oxygen: High resolution electron energy loss spectroscopy studies. Shpilman, Z.; Gouzman, I.; Grossman, E.; Akhvlediani, R.; Hoffman, A. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p114914 

    Diamond surface oxidation by atomic oxygen, annealing up to ∼700 °C, and in situ exposure to thermally activated hydrogen were studied by high resolution electron energy loss spectroscopy (HREELS). After atomic oxygen (AO) exposure, HREELS revealed peaks associated with CHx groups,...

  • Frank dislocation loops in HgTe/CdTe superlattices on CdTe/Si(211)B substrates. Fu, L. F.; Okamoto, N. L.; Chi, M. F.; Browning, N. D.; Jung, H. S.; Grein, C. H. // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p023104 

    The defect structures in HgTe/CdTe superlattices (SLs) on CdTe/Si(211)B substrates grown by molecular-beam epitaxy have been investigated using (scanning) transmission electron microscopy and electron energy loss spectroscopy. Straight Hg-rich defects perpendicular to the SLs have been observed...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics