TITLE

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

AUTHOR(S)
Weyher, J. L.; Ashraf, H.; Hageman, P. R.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031913
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN templates grown by the metal organic chemical vapor deposition method were etched in a defect-selective molten salts eutectic and were subsequently overgrown by a GaN layer using the hydride vapor phase epitaxy (HVPE) method. Optimized conditions of etching and of HVPE growth processes resulted in a significant reduction of the dislocations density (DD). Local areas virtually free of dislocations were obtained on ∼50% of the surface, while the average DD was reduced from 3×109 cm-2 in the template to about 2×107 cm-2 in the HVPE-grown GaN layer. A model has been developed to explain the mechanism of reduction of the DD during the overgrowth process. The model was confirmed by the photoetching of cleaved layers.
ACCESSION #
43398040

 

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