Mesa-isolated InGaAs photodetectors with low dark current

Klem, J. F.; Kim, J. K.; Cich, M. J.; Keeler, G. A.; Hawkins, S. D.; Fortune, T. R.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031112
Academic Journal
We demonstrate InGaAs photodiodes with an epitaxial heterostructure that allows simple mesa isolation of individual devices with low dark current and high responsivity. An undoped InAlAs barrier and passivation layer enables isolation of detectors without exposing the InGaAs active region, while simultaneously reducing electron diffusion current. Photodetectors with mesa sizes as small as 25×25 μm2 exhibit dark current densities of 10 nA/cm2 at 295 K and responsivities of 0.62 A/W at 1550 nm.


Related Articles

  • One-dimensional analysis of N-on-p Pb1-xSnxSe compositionally graded heterojunction photodetectors. Elizondo, S. L.; Shi, Z. // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p114510 

    This work presents a theoretical investigation of the performance of N-on-p Pb1-xSnxSe heterojunction photodiodes with a linear gradient in composition. We quantify the improvement of the quantum efficiency, R0A product, and detectivity for a graded heterojunction device as compared to a basic...

  • Negative Differential Conductivity in InAs/AlSb Superlattices. KAGANA, M. S.; ALTUKHOV, I. V.; BARANOV, A. N.; IL'YNSKAYA, N. D.; PAPROTSKIY, S. K.; SINIS, V. P.; TEISSIER, R.; USIKOVA, A. A. // Acta Physica Polonica, A.;Feb2011, Vol. 119 Issue 2, p210 

    The negative differential conductivity and electric instabilities are found to appear in type-II InAs/AlSb superlattices. The origin of the nonlinear effects is discussed.

  • Effect of the optical excitation signal intensity on the impulse response of a metal-semiconductor-metal photodiode. Averine, S. V.; Kuznetsov, P. I.; Alkeev, N. V. // Technical Physics;Oct2009, Vol. 54 Issue 10, p1490 

    The effect of the optical excitation signal intensity on the impulse response of a photodetector based on a set of metal-semiconductor-metal (MSM) rectifier contacts is studied. The response of the detector is better at a low optical excitation signal. When the energy of an optical excitation...

  • InGaAs photomixers generate and detect terahertz radiation. Overton, Gail // Laser Focus World;Jan2006, Vol. 42 Issue 1, p22 

    The article reports that researchers from Cambridge, England have demonstrated the first all-optoelectronic continuous-wave (CW) terahertz photomixing system using indium gallium arsenide (InGaAs) photomixers. The system uses low-temperature grown InGaAs devices for both emitters and coherent...

  • PHOTODIODES Resonant-tunneling detector counts photons. Wallace, John // Laser Focus World;Apr2005, Vol. 41 Issue 4, p24 

    Reports that researchers at Toshiba Research Europe and the University of Cambridge have developed a quantum-dot detector which directly senses single-photon-excited carriers, allowing low-noise detection. Claim that a single-photon-produced hole in a layer of quantum dots causes a change in the...

  • Interface band gap engineering in InAsSb photodiodes. Carras, M.; Reverchon, J. L.; Marre, G.; Renard, C.; Vinter, B.; Marcadet, X.; Berger, V. // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p102103 

    The optimization of an InAs0.91Sb0.09 based infrared detector has been performed. The importance of the interfaces between the active region and the contacts in generation recombination phenomena is demonstrated. The two sides of the active region are optimized independently through...

  • A study of avalanche photodetectors with a large photosensitive surface in the photon counting mode. Gulakov, I.; Zalesskii, V.; Zenevich, A.; Leonova, T. // Instruments & Experimental Techniques;Mar2007, Vol. 50 Issue 2, p249 

    The possibility of operating author-designed avalanche photodetectors with a large photosensitive surface (7-mm2 area) in the photon counting mode at room temperatures is shown. The characteristics of these photodetectors and ΦД-115Л avalanche photodiodes are compared in the photon...

  • Interband-cascade infrared photodetectors with superlattice absorbers. Yang, Rui Q.; Tian, Zhaobing; Cai, Zhihua; Klem, J. F.; Johnson, Matthew B.; Liu, H. C. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 5, p054514 

    Interband-cascade infrared photodetectors (ICIPs), composed of discrete superlattice absorbers, are demonstrated at temperatures up to 350 K with a cutoff wavelength near 5 μm at 80 K to beyond 7 μm above room temperature. The peak responsivity exceeds 200 mA/W, higher than the values...

  • InAs–GaSb laser: Prospects for efficient terahertz emission. Shvartsman, L. D.; Laikhtman, B. // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131104 

    We suggest to use InAs/GaSb coupled quantum wells for terahertz lasing. In these heterostructures terahertz lasing is based not on intersubband but on interband transitions. Crucial advantages of this design in comparison with intersubband lasers are (i) a large value of the interband dipole...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics