TITLE

Aharonov–Bohm oscillations in a nanoscale dopant ring in silicon

AUTHOR(S)
Reusch, T. C. G.; Fuhrer, A.; Füchsle, M.; Weber, B.; Simmons, M. Y.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated a nanoscale ring of phosphorus dopants in silicon using a scanning tunneling microscope to pattern a hydrogen resist layer. Low-temperature magnetotransport measurements reveal both aperiodic universal conductance fluctuations and periodic Aharonov–Bohm oscillations. From the ratio of the h/e and h/2e components of the Aharonov–Bohm oscillations, we estimate a phase coherence length of ≃100 nm at a temperature T=100 mK. This is in agreement with previous results from weak localization measurements on low-dimensional dopant devices in silicon.
ACCESSION #
43398030

 

Related Articles

  • Coulomb interaction controlled room temperature oscillation of tunnel current in porous Si. Afonin, V. V.; Gurevich, V. L.; Laiho, R.; Pavlov, A.; Pavlova, Y. // Physics of the Solid State;Jun98, Vol. 40 Issue 6, p1047 

    A novel phenomenon of regular oscillations is observed in I-V characteristics of porous silicon under illumination by visible light. The measurements are performed at room temperature using a scanning tunneling microscope. The heights of the oscillation peaks appear to be a linear function of...

  • Time-dependent oscillations of tunneling current on partially oxidized Si (111) surfaces. Xie, F.; von Blanckenhagen, P. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 8, pS217 

    Abstract. Clean and partially oxidized Si (111) surfaces were investigated by scanning tunneling microscopy and spectroscopy (STM/STS). In contrast to STS spectra measured on clean Si surfaces, time-dependent periodic oscillations of tunneling current were detected on partially oxidized Si...

  • Small cavity nonresonant tunable microwave-frequency alternating current scanning tunnelling... Bumm, L.A.; Weiss, P.S. // Review of Scientific Instruments;Aug1995, Vol. 66 Issue 8, p4140 

    Describes the development of a microwave-frequency alternating current scanning tunneling microscope which employs a cavity with no resonances in the frequency range used. Instrument design; Assembly and operations; Frequency domain and spectroscopic measurement obtained.

  • Scanning-Tunneling and Force Microscopy in Air and Vacuum.  // Physics Today;Jul90, Vol. 43 Issue 7, p75 

    Reviews scanning-tunneling and scanning-force microscopy systems from Park Scientific.

  • Observation of pn junctions on implanted silicon using a scanning tunneling microscope. Hosaka, Sumio; Hosoki, Shigeyuki; Takata, Keiji; Horiuchi, Katsutada; Natsuaki, Nobuyoshi // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p487 

    Si pn junctions fabricated by photoresist masked As+ implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling microscope (STM). Using the CITS, a specific bias was chosen to define n-type or p-type areas according to whether or not current flowed....

  • Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air. Dagata, J. A.; Schneir, J.; Harary, H. H.; Evans, C. J.; Postek, M. T.; Bennett, J. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p2001 

    The chemical modification of hydrogen-passivated n-Si (111) surfaces by a scanning tunneling microscope (STM) operating in air is reported. The modified surface regions have been characterized by STM spectroscopy, scanning electron microscopy (SEM), time-of-flight secondary-ion mass spectrometry...

  • Hydrogenated amorphous silicon studied by scanning tunneling microscopy. Wiesendanger, R.; Rosenthaler, L.; Hidber, H. R.; Güntherodt, H.-J.; McKinnon, A. W.; Spear, W. E. // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4515 

    Presents a study which examined the local electronic properties, topographical and chemical structure of hydrogenated amorphous silicon by using scanning tunneling microscopy under ultrahigh vacuum conditions. Measurement of the local electronic properties of the hydrogenated amorphous silicon;...

  • Direct writing in Si with a scanning tunneling microscope. van Loenen, E. J.; Dijkkamp, D.; Hoeven, A. J.; Lenssinck, J. M.; Dieleman, J. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1312 

    Using the W tip of a scanning tunneling microscope, indentations with diameters of 2–10 nm have been made directly in Si (110) and Si (001) surfaces. It is possible to create and image (‘‘write and read’’) arbitrary lines and bit patterns reproducibly with a...

  • Strong-field effect in nanofabrication on chemically prepared silicon. Hetrick, J. M.; Zheng, X.; Nayfeh, M. H. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4721 

    Offers information on a study which investigated the uniformity of scanning tunneling microscope nanofabrication on as-prepared chemically etched silicon. Theoretical background; Methods used; Results and discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics