Aharonov–Bohm oscillations in a nanoscale dopant ring in silicon

Reusch, T. C. G.; Fuhrer, A.; Füchsle, M.; Weber, B.; Simmons, M. Y.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032110
Academic Journal
We have fabricated a nanoscale ring of phosphorus dopants in silicon using a scanning tunneling microscope to pattern a hydrogen resist layer. Low-temperature magnetotransport measurements reveal both aperiodic universal conductance fluctuations and periodic Aharonov–Bohm oscillations. From the ratio of the h/e and h/2e components of the Aharonov–Bohm oscillations, we estimate a phase coherence length of ≃100 nm at a temperature T=100 mK. This is in agreement with previous results from weak localization measurements on low-dimensional dopant devices in silicon.


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