Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror

Li, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G.
July 2009
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033307
Academic Journal
We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85±9 cd/A and 80±8 lm/W, respectively, corresponding to an external quantum efficiency of 21±2% and a power conversion efficiency of 15±2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n+-Si:Au anode counterpart, respectively.


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