TITLE

Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror

AUTHOR(S)
Li, Y. Z.; Xu, W. J.; Ran, G. Z.; Qin, G. G.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033307
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85±9 cd/A and 80±8 lm/W, respectively, corresponding to an external quantum efficiency of 21±2% and a power conversion efficiency of 15±2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n+-Si:Au anode counterpart, respectively.
ACCESSION #
43398029

 

Related Articles

  • Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source. Soohwan Jang; Jau-Jiun Chen; Kang, B. S.; Ren, F.; Norton, D. P.; Pearton, S. J.; Lopata, J.; Hobson, W. S. // Applied Physics Letters;11/28/2005, Vol. 87 Issue 22, p222113 

    p-n junctions have been formed in lightly n-type (1017 cm-3) bulk, single-crystal ZnO substrates by diffusion of P from a Cd3P2, arsenic and red phosphorous dopant source in a closed-ampoule system. The P incorporation depth was found to be ∼200 nm after diffusion at 550 °C for 30 min,...

  • Single-layer organic light-emitting diodes using naphthyl diamine. Tse, S. C.; Tsung, K. K.; So, S. K. // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p213502 

    N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB), a common hole transporter, was employed to fabricate single-layer organic light-emitting diodes (OLEDs). With a quasi-Ohmic anode, NPB device exhibited a bulk-limited hole current in the low-voltage...

  • Combination of a polyaniline anode and doped charge transport layers for high-efficiency organic light emitting diodes. Fehse, Karsten; Schwartz, Gregor; Walzer, Karsten; Leo, Karl // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p124509 

    Up to now, most organic light emitting diodes (OLEDs) have utilized inorganic materials as transport anodes. In this study, we show that conductive polymers are suitable for this purpose as well. Polyaniline anodes, with a conductivity of 200 S/cm, are used to inject holes into the adjacent...

  • Diffusion of atmospheric gases into barrier-layer sealed organic light emitting diodes. Mandlik, Prashant; Lin Han; Wagner, Sigurd; Silvernail, Jeff A.; Rui-Qing Ma; Hack, Michael; Brown, Julie J. // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203306 

    Organic light emitting diodes (OLEDs) are protected from the atmosphere with a barrier layer. Even when this permeation barrier is hermetic, dark spots still may grow and dark sheets may extend into the OLED. These grow by diffusion from the atmosphere along the interfaces between the barrier...

  • Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs. Grebenshchikova, A.; Imenkov, A.N.; Zhurtanov, B.E.; Danilova, T.N.; Sipovskaya, M.A.; Blasenko, N.V.; Yakovlev, Yu.P. // Semiconductors;Jun2004, Vol. 38 Issue 6, p717 

    GaSb-based crystals shaped like a stepped pyramid with smoothed steps are obtained. The crystals are intended for the fabrication of light-emitting diodes in which the short-wavelength emission band of a double-charged intrinsic acceptor is transformed into the long-wavelength band without loss...

  • Organic light-emitting diodes containing multilayers of organic single crystals. Nakanotani, Hajime; Adachi, Chihaya // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053301 

    Double-heterostructure (DH) organic light-emitting diodes (OLEDs) with thick carrier transport layers based on organic single crystals have been fabricated. Although the total thickness of the organic layers (∼1.4 μm) is one order of magnitude greater than that of conventional thin-film...

  • Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure. Maiorano, V.; Bramanti, A.; Carallo, S.; Cingolani, R.; Gigli, G. // Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133305 

    A bottom contact/top gate ambipolar “p-i-n” layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical...

  • Remarkable increase in the efficiency of N,N′-dimethylquinacridone dye heavily doped organic light emitting diodes under high current density. Huihui Liu; Fei Yan; Wenlian Li; Bei Chu; Wenming Su; Zisheng Su; Junbo Wang; Zhizhi Hu; Zhiqiang Zhang // Applied Physics Letters;Feb2010, Vol. 96 Issue 8, p083301 

    We demonstrated a remarkable rise of external quantum efficiency (EQE) of N,N′-dimethylquinacridone (DMQA) heavily doped organic light-emitting diodes with tris-(8-hydroxyquinolinato) aluminum as host at large current density. The EQE of 5.0 wt % DMQA doped device increased 42% as the...

  • Effect of doping profile on the lifetime of green phosphorescent organic light-emitting diodes. Lee, Jun Yeob // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p153503 

    The lifetime of green phosphorescent light-emitting diodes was improved by using a graded doping structure in light-emitting layer. A green device with high doping concentration at the hole transport layer and light-emitting layer interface showed longer lifetime than a conventional device with...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics