TITLE

p-type conduction in arsenic-doped ZnSe nanowires

AUTHOR(S)
Song, H. S.; Zhang, W. J.; Yuan, G. D.; He, Z. B.; Zhang, W. F.; Tang, Y. B.; Luo, L. B.; Lee, C. S.; Bello, I.; Lee, S. T.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reliable p-type conduction was achieved in ZnSe nanowires (NWs) synthesized by introducing Zn3As2 as a dopant source. The crystal structure and orientation of NWs remained unchanged after doping. The electrical and transport properties of As-doped ZnSe NWs were investigated via the characteristics of NW-based field-effect transistors. The origin of p-type conduction in ZnSe NWs is attributed to the formation of substitutional AsSe and AsZn-2VZn complexes. Arsenic atoms were considered to incorporate into ZnSe lattices partly as As–H pairs; therefore postgrowth annealing could improve p-type conduction by dissociating As–H bonds and activating As acceptors.
ACCESSION #
43398021

 

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