Model for dielectric growth on silicon in a nitrous oxide environment

Dimitrijev, Sima; Sweatman, Denis; Harrison, H. Barry
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1539
Academic Journal
Presents a model for the grown kinetics of ultrathin dielectrics obtained by silicon oxidation in nitrous oxide environment. Limitation of oxide growth by time-dependent interface reaction; Impact of nitrogen on interface oxidation; Dependence of neutralization on growth site density.


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