TITLE

Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001)

AUTHOR(S)
Chen, Y.; Zakharov, N.D.; Werner, P.; Liliental-Weber, Z.; Washburn, J.; Klem, J.F.; Tsao, J.Y.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1536
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the atomic structure of misfit dislocation in In[sub 0.2]Ga[sub 0.8]As/GaAs interfaces by high-resolution electron microscopy. Confinement of partial dislocations to the interface; Influence of substrate misorientation on dislocation density; Impact of dislocation on misfit strains.
ACCESSION #
4338130

 

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