Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001)

Chen, Y.; Zakharov, N.D.; Werner, P.; Liliental-Weber, Z.; Washburn, J.; Klem, J.F.; Tsao, J.Y.
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1536
Academic Journal
Examines the atomic structure of misfit dislocation in In[sub 0.2]Ga[sub 0.8]As/GaAs interfaces by high-resolution electron microscopy. Confinement of partial dislocations to the interface; Influence of substrate misorientation on dislocation density; Impact of dislocation on misfit strains.


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