Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by

Ohnishi, Nobukazu; Makita, Yunosuke; Asakura, Hisao; Iida, Tsutomu; Yamada, Akimasa; Shibata, Hajime; Uekusa, Shin-ichiro; Matsumori, Tokue
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1527
Academic Journal
Examines the formational conditions of defect-induced bound exciton (DIBE) emissions in GaAs. Defects on both A-and B-polarity substrates; Presence of pronounce DIBE emissions on A-polarity samples; Confirmation of DIBE formation only in the existence of double-handed gallium adatom.


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