TITLE

Conditions for the formation of defect-induced bound exciton emissions in GaAs grown by

AUTHOR(S)
Ohnishi, Nobukazu; Makita, Yunosuke; Asakura, Hisao; Iida, Tsutomu; Yamada, Akimasa; Shibata, Hajime; Uekusa, Shin-ichiro; Matsumori, Tokue
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1527
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formational conditions of defect-induced bound exciton (DIBE) emissions in GaAs. Defects on both A-and B-polarity substrates; Presence of pronounce DIBE emissions on A-polarity samples; Confirmation of DIBE formation only in the existence of double-handed gallium adatom.
ACCESSION #
4338127

 

Related Articles

  • Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates. Kang, T.W.; Yuldashev, Sh. U. // Journal of Applied Physics;7/15/2000, Vol. 88 Issue 2, p790 

    Investigates the effects of the band-tail states on the exciton lines in unintentionally doped and Mg-doped GaN epilayers grown on sapphire substrates with the use of plasma-assisted molecular beam epitaxy. Relationship between the radiative recombinations of the carriers and the band-tail states.

  • Internal photoemission and energy-band offsets in GaAs-GalnP p-I-N heterojunction photodiodes. Haase, M.A.; Hafich, M.J.; Robinson, G.Y. // Applied Physics Letters;2/11/1991, Vol. 58 Issue 6, p616 

    Reports on observations of internal photoemission in heterojunction photodiodes grown by gas source molecular beam epitaxy. Measurement of threshold energies associated with the photocurrent mechanism; Determination of energy-band discontinuities in the heterostructure material system; Results...

  • Evidence of isoelectronic traps in molecular beam epitaxy grown Zn[sub 1-x]Be[sub x]Se: Temperature- and pressure-dependent photoluminescence studies. Kim, Bosang S.; Kuskovsky, Igor L.; Tian, C.; Herman, Irving P.; Neumark, G. F.; Guo, S. P.; Tamargo, M. C. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4151 

    We have studied undoped Zn[sub 1-x]Be[sub x]Se alloys grown by molecular beam epitaxy by photoluminescence (PL) as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep,...

  • Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers. Das, Utpal; Chen, Yi; Bhattacharya, Pallab // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1679 

    We report on the performance characteristics of InGaAs/GaAs strained-layer superlattice coplanar ridge-type directional couplers realized by molecular beam epitaxy. The measured power transfer characteristics with 1.15 μm incident photoexcitation demonstrate nonlinear coupling due to...

  • Observation of exciton and biexciton processes in Cd[sub x]Zn[sub 1-x]Se/ZnSe (x=0.2). Li Wang; Simmons, Joseph H. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1450 

    Observes the exciton and biexciton transition process in Cd [sub x]Zn [sub 1-x]Se/ZnSe multiple quantum wells samples grown by molecular beam epitaxy under temperature photoluminescence. Examination of energy positions; Intensity dependence on excitation power density; Polarization dependence,...

  • Spectroscopic evidence for the excitonic lasing mechanism in ultraviolet ZnS/ZnCdS multiple quantum well lasers. Ozanyan, K. B.; Nicholls, J. E.; O’Neill, M.; May, L.; Hogg, J. H. C.; Hagston, W. E.; Lunn, B.; Ashenford, D. E. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4230 

    We demonstrate optically pumped lasing at room temperature from ZnS/ZnCdS quantum-well structures grown on (100) GaP substrates by molecular beam epitaxy. In the structures with the lowest Cd composition, optically pumped lasing at wavelengths as low as 333 nm (at 8 K) is observed. We present...

  • Photovoltaic spectroscopy of exciton structures in Zn1-xCdxSe/ZnSe multiple quantum wells. Anedda, A.; Casu, M. B.; Serpi, A. // Journal of Applied Physics;5/1/1996, Vol. 79 Issue 9, p6995 

    Presents information on a study that observed exciton transitions in photovoltaic spectra of strained-layer multiple-quantum-well samples of Zn[sub1 x] Cd[subx]Se/ZnSe grown by molecular-beam epitaxy. Experimental procedure; Results and discussion on the study; Conclusions.

  • Excitonic recombination in GaN grown by molecular beam epitaxy. Smith, M.; Chen, G. D. // Applied Physics Letters;12/4/1995, Vol. 67 Issue 23, p3387 

    Examines the free-excitonic transitions and dynamic processes in GaN grown by molecular beam epitaxy using time-resolved photoluminescence. Analysis on exciton photoluminescence spectral line shape, quantum yield and recombination lifetimes; Presence of superior crystalline quality and...

  • Photoemission spectroscopy of Al[sub 0.27]Ga[sub 0.73]As:As photodiodes. McInturff, D.T.; Woodall, J.M.; Warren, A.C.; Braslau, N.; Pettit, G.D.; Kirchner, P.D.; Melloch, M.R. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2367 

    Performs photoemission spectroscopy on a p-i-n photodiode with arsenic precipitates Al[sub 0.27]Ga[sub 0.73]As:As forming the active layer. Use of molecular beam epitaxy; Consistency of the barrier height of embedded metallic arsenic cluster with heterostructure conduction band offset.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics