Vacancy-mediated disordering of AlGaAs-GaAs superlattices by group IV or VI impurity in-diffusion

Olmsted, B.L.; Houde-Walter, S.N.
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1516
Academic Journal
Examines the disordering of AlGaAs-GaAs by the in-diffusion of group IV and VI n-type impurities. Enhancement of the Al-Ga interdiffusion coefficient; Changes in the Fermi-level position; Interdiffusion characteristics by Si or Ge.


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