TITLE

Vacancy-mediated disordering of AlGaAs-GaAs superlattices by group IV or VI impurity in-diffusion

AUTHOR(S)
Olmsted, B.L.; Houde-Walter, S.N.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1516
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the disordering of AlGaAs-GaAs by the in-diffusion of group IV and VI n-type impurities. Enhancement of the Al-Ga interdiffusion coefficient; Changes in the Fermi-level position; Interdiffusion characteristics by Si or Ge.
ACCESSION #
4338123

 

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