Model for oxide damage from gate charging during magnetron etching

Sychi Fang; McVittie, James P.
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1507
Academic Journal
Presents a model for oxide damage from gate charging during magnetron etching. Consequence of plasma nonuniformity; Imbalance of ion and electron currents to the wafer surface; Location of damages caused by etching; Use of plasma discharges in very large scale integration.


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