TITLE

Model for oxide damage from gate charging during magnetron etching

AUTHOR(S)
Sychi Fang; McVittie, James P.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a model for oxide damage from gate charging during magnetron etching. Consequence of plasma nonuniformity; Imbalance of ion and electron currents to the wafer surface; Location of damages caused by etching; Use of plasma discharges in very large scale integration.
ACCESSION #
4338120

 

Related Articles

  • Investigation of the properties of CdO films. Baranov, A. M.; Malov, Yu. A.; Teryoshin, S. A.; Val’dner, V. O. // Technical Physics Letters;Oct97, Vol. 23 Issue 10, p805 

    Cadmium oxide films obtained by magnetron sputtering of a cadmium target in a nitrogenoxygen mixture are investigated. It is established that these films have a lower resistivity than do films obtained by other methods. It is concluded that the practical utilization of CdO films as transparent...

  • Structural, optical, and electronic properties of magnetron-sputtered platinum oxide films. Neff, H.; Henkel, S.; Hartmannsgruber, E.; Steinbeiss, E.; Michalke, W.; Steenbeck, K.; Schmidt, H. G. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7672 

    Analyzes the structural, optical and electronic properties of magnetron-sputtered platinum oxide films. Experiment conducted; Results; Discussion.

  • Oblique ion texturing of yttria-stabilized zirconia: the {211}<111> structure. Berdahl, Paul; Reade, Ronald P.; Liu, Jinping; Russo, Richard E.; Fritzemeier, Les; Buczek, David; Schoop, Urs // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p343 

    Amorphous (Zr,Y)O[SUBx] films were synthesized by reactive magnetron sputtering and subsequently crystallized by oblique ion bombardment. Crystalline texture nucleated by the ion beam was replicated by solid-phase epitaxial growth throughout the formerly amorphous yttria-stabilized zirconia...

  • Transparent conducting antimony-doped tin oxide films deposited on flexible substrates by r.f. magnetron-sputtering. Hao, X.; Ma, J.; Zhang, D.; Xu, X.; Yang, Y.; Ma, H.; Ai, S. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 3, p397 

    Transparent conducting antimony-doped tin oxide (SnO[sub 2] :Sb) films were deposited on organic substrates by r.f. magnetron-sputtering. Polycrystalline films with a resistivity of ≈ 6.5×10[sup -3] Ω cm, a carrier concentration of≈ 1.2×10[sup 20] cm[sup -3] and a Hall mobility...

  • Properties of conductive zinc oxide films for transparent electrode applications prepared by rf magnetron sputtering. Schropp, R. E. I.; Madan, A. // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2027 

    Examines the properties of conductive zinc oxide films for transparent electrode applications prepared by radio frequency magnetron sputtering. Information on the various levels of resistivities of the films; Evaluation of the measurement results of the samples; Analysis of film properties...

  • Fine silicon oxide particles in rf hollow magnetron discharges. Chu, J. H.; I, Lin // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4741 

    Examines the formation and the properties of fine silicon oxide particles in a hollow post-type radio frequency magnetron discharge in SiH[sub4]/O[sub2]/Ar gas mixtures. Impact of the accumulation of aggregated fine particles at the end trap; Effect of particle formation in discharge systems;...

  • Sputter deposition of YBa2Cu3O7-x films on Si at 500 °C with conducting metallic oxide as a buffer layer. Jia, Q. X.; Anderson, W. A. // Applied Physics Letters;7/16/1990, Vol. 57 Issue 3, p304 

    Superconducting YBa2Cu3O7-x thin films were deposited on Si substrates at 500 °C by rf magnetron sputtering from a stoichiometric oxide target. Metallic oxide RuO2, sputtered by reactive dc magnetron, was used as a buffer layer to nucleate the superconducting film and minimize the reactions...

  • Origin of stress in radio frequency magnetron sputtered zinc oxide thin films. Menon, Rashmi; Gupta, Vinay; Tan, H. H.; Sreenivas, K.; Jagadish, C. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 6, p064905 

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1...

  • Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure. ABDALLAH, B.; AL-KHAWAJA, S. // Acta Physica Polonica, A.;2015, Vol. 28 Issue 3, p283 

    In this paper, preferentially oriented (002) ZnO thin films have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin films at different substrate temperatures on the growth is studied. A ZnO thin film with...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics