TITLE

GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

AUTHOR(S)
Wei-Chou Hsu; Wen-Chau Liu; Der-Feng Guo; Wen-Shiung Lour
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates GaAs negative-differential-resistance (NDR) Switching device with a double delta-doped quantum well structure prepared by molecular beam epitaxy. Barriers of electron injection; Observation of double s-shaped NDR; Impact of temperature variations on the device properties.
ACCESSION #
4338119

 

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