Fabrication of 5-7 nm wide etched lines in silicon using 100 keV electron-beam lithography and

Wei Chen; Ahmed, Haroon
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1499
Academic Journal
Demonstrates the fabrication of wide etched lines in Si using electron-beam lithography and polymethylmethacrylate (PMMA) resist. Mechanisms in determining the development of linewidth in resist; Importance of intermolecular force in determining PMMA properties; Elimination of resist swelling with ultrasonic development.


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