Carrier-carrier scattering induced capture in quantum well lasers

Blom, P.W.M.; Haverkort, J.E.M.; van Hall, P.J.; Wolter, J.H.
March 1993
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1490
Academic Journal
Demonstrates the calculation of the carrier capture efficiency into various types of quantum well lasers. Relevance of the carrier capture process for laser performance; Exploitation of the predicted and observed oscillations of the carrier capture time; Demonstration of the cc-capture process.


Related Articles

  • Monte Carlo studies on the well-width dependence of carrier capture time in graded-index.... Lam, Yeeloy; Singh, Jasprit // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1874 

    Focuses on the Monte Carlo studies on the carrier capture time in graded-index separate confinement heterostructure (GRINSCH) quantum well laser structures. Parameters affecting the GRINSCH quantum well laser modulation speed limit; Purpose of developing the Monte Carlo technique; Difference...

  • Characteristics of longitudinal optical phonon assisted quantum carrier capture.... Ta-Chung Wu; Kan, Sidney C. // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1220 

    Examines the characteristics of longitudinal optical phonon assisted quantum carrier capture phenomena in quantum well laser. Relationship of the quantum carrier capture time to temperature and bias current; Carrier scattering rate in phonon emission and absorption; Measurement of signal...

  • Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier. Po-Min Tu; Chun-Yen Chang; Shih-Cheng Huang; Ching-Hsueh Chiu; Jet-Rung Chang; Wei-Ting Chang; Dong-Sing Wuu; Hsiao-Wen Zan; Chien-Chung Lin; Hao-Chung Kuo; Chih-Peng Hsu // Applied Physics Letters;5/23/2011, Vol. 98 Issue 21, p211107 

    The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show...

  • Time-dependent approach to double-barrier quantum well oscillators. Liu, H. C. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p453 

    Microwave and millimeter-wave oscillation frequencies and efficiencies of heterojunction double-barrier resonant-tunneling structures are investigated theoretically from a time-dependent point of view. Calculations for two specific devices show that the oscillation characteristics depend...

  • Wave-packet oscillations in a strongly driven InAs quantum well. Cruz, H. // Journal of Applied Physics;2/1/2003, Vol. 93 Issue 3, p1620 

    In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a strongly driven InAs quantum well. Considering a time-dependent Hartree potential, we have calculated the tunneling dynamics between the two...

  • Plasmon-based terahertz emission from quantum well structures. Bakshi, P.; Kempa, K.; Scorupsky, A.; Du, C.G.; Feng, G.; Zobl, R.; Strasser, G.; Rauch, C.; Pacher, Ch.; Unterrainer, K. // Applied Physics Letters;9/20/1999, Vol. 75 Issue 12, p1685 

    Examines coherent plasma oscillations generated in quantum well structures where a sufficient population inversion is maintained in the carrier distribution by injection-extraction configurations. Collective response characteristics of such structures; Emission maximum; Agreement between...

  • Frequency and power limit of quantum well oscillators. Jogai, B.; Wang, K. L.; Brown, K. W. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1003 

    The maximum frequency at which amplification can be obtained from quantum well oscillators is discussed. Intrinsically, the frequency limit for having negative differential resistance (NDR) can be very high, of the order of the inverse of the electron transit time. Owing to the large capacitance...

  • Approximate expressions for modulation speed and threshold for performance optimization of.... Vahala, Kerry J.; Chung-en Zah // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3230 

    Presents analytical expressions for threshold and relaxation oscillation corner frequency derived for biaxial strain quantum-well lasers. Computation of relaxation oscillation frequency; Dependence of transparency current density on doping density; Correlation between relaxation oscillation...

  • Stimulated emission and laser oscillations in ZnSe-Zn1-xMnxSe multiple quantum wells at ∼453 nm. Bylsma, R. B.; Becker, W. M.; Bonsett, T. C.; Kolodziejski, L. A.; Gunshor, R. L.; Yamanishi, M.; Datta, S. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1039 

    In this letter we report the first observation of stimulated emission and laser oscillations occurring in ZnSe-Zn1-xMnxSe quantum well structures. The results were obtained in superlattices consisting of alternating layers of ZnSe and Zn1-xMnxSe on a ZnSe buffer layer grown by molecular beam...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics