TITLE

Is the exponential tail in amorphous semiconductors caused by random charges?

AUTHOR(S)
Kemp, Mathieu; Silver, Marvin
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/29/1993, Vol. 62 Issue 13, p1487
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines factors causing random electrical charges in the exponential tail in amorphous semiconductors. Properties of amorphous semiconductors; Origin of exponential tail; Effect of topological disorder on the broadening of state energies; Interaction of localized state lattice with the electrostatic potential.
ACCESSION #
4338113

 

Related Articles

  • Electronic transport analysis by electron-beam-induced current at variable energy of thin-film amorphous semiconductors. Najar, S.; Equer, B.; Lakhoua, N. // Journal of Applied Physics;4/1/1991, Vol. 69 Issue 7, p3975 

    Focuses on a study which applied the electron-beam-induced current technique to the determination of charge-carrier collection properties in amorphous silicon semiconductors. Calculation techniques to demonstrate the efficiency of the technique; Approximations of the electron-hole generation...

  • Mechanisms influencing `hot-wire' deposition of hydrogenated amorphous silicon. Molebroek, Edith C.; Mahan, A.H.; Gallagher, Alan // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1909 

    Studies mechanisms influencing hot-wire deposition of hydrogenerated amorphous silicon. Electronic and infrared properties of the film; Conductivity ratio for samples made with pure silane; Deterioration of film properties; Ambipolar diffusion length.

  • Effect of helical-induced anisotropy on the magnetoinductance response of Co-based amorphous wires. Betancourt, I.; Valenzuela, R. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2022 

    In this letter, the effect of helical anisotropy, induced by torsion strain, on the circular permeability μ[sub [lowercase_phi_synonym]], of a vanishing negative magnetostrictive CoFeSiB wire is presented. As a function of a dc applied magnetic field, H[sub dc], μ[sub...

  • Light-induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption. Strait, J.; Tauc, J. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p589 

    Phosphorus-doped and boron-doped hydrogenated amorphous silicon were studied by photoinduced absorption (PA) in the time range from 2 to 1800 ps. Prolonged light exposure (hω=2.0 eV) causes PA to decay more rapidly. The data are fit to a multiple trapping model. Minority carriers get trapped...

  • Amorphous thin films of Zn3P2: Preparation and characterization. Deiss, J. L.; Elidrissi, B.; Robino, M.; Weil, R. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p969 

    We report about the preparation and characterization of amorphous thin films of Zn3P2. The optical properties of these films are given and compared to those of polycrystalline thin films.

  • Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon. Jackson, W. B.; Stutzmann, M. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p957 

    Annealing of metastable dangling bond defects in light-soaked undoped hydrogenated amorphous silicon (a-Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The...

  • Correlation of stress with light-induced defects in hydrogenated amorphous silicon films. Kurtz, Sarah R.; Tsuo, Y. Simon; Tsu, Raphael // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p951 

    No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a...

  • Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique. Hattori, K.; Mori, T.; Okamoto, H.; Hamakawa, Y. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1259 

    The in-plane diffusion coefficient and lifetime of photogenerated carriers in amorphous silicon have been measured by the transient grating technique in amorphous silicon (a-Si)/silicon carbide (a-SiC) multilayered structures, as a function of the a-Si well layer thickness. As the layer...

  • Solid phase epitaxy of laser amorphized silicon. Custer, J. S.; Thompson, Michael O.; Bucksbaum, P. H. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1402 

    The solid phase epitaxial regrowth kinetics of laser amorphized [100] silicon-on-sapphire was studied using in situ time-resolved optical transmission. Regrowth rates for ≤20-nm-thick amorphous silicon films were observed to increase from 1.7×10-10 cm/s at 750 K to 1.9×10-7 cm/s at...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics